Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor

D. K. Ferry

doi:10.1016/0039-6028(78)90054-7

Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor

D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The scattering rate and momentum relaxation time for scattering of electrons in the quasi-two-dimensional quantized levels of an inversion or accumulation layer on a semiconductor surface is calculated for interactions via the polar-optical phonon. This interaction represents an important scattering mechanism in compound semiconcudctors. The quantization of the motion perpendicular to the surface enhances the scattering by this process over the bulk scattering.

Original language	English (US)
Pages (from-to)	86-91
Number of pages	6
Journal	Surface Science
Volume	75
Issue number	1
DOIs	https://doi.org/10.1016/0039-6028(78)90054-7
State	Published - Jul 1 1978

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(78)90054-7

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title = "Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor",

abstract = "The scattering rate and momentum relaxation time for scattering of electrons in the quasi-two-dimensional quantized levels of an inversion or accumulation layer on a semiconductor surface is calculated for interactions via the polar-optical phonon. This interaction represents an important scattering mechanism in compound semiconcudctors. The quantization of the motion perpendicular to the surface enhances the scattering by this process over the bulk scattering.",

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N2 - The scattering rate and momentum relaxation time for scattering of electrons in the quasi-two-dimensional quantized levels of an inversion or accumulation layer on a semiconductor surface is calculated for interactions via the polar-optical phonon. This interaction represents an important scattering mechanism in compound semiconcudctors. The quantization of the motion perpendicular to the surface enhances the scattering by this process over the bulk scattering.

AB - The scattering rate and momentum relaxation time for scattering of electrons in the quasi-two-dimensional quantized levels of an inversion or accumulation layer on a semiconductor surface is calculated for interactions via the polar-optical phonon. This interaction represents an important scattering mechanism in compound semiconcudctors. The quantization of the motion perpendicular to the surface enhances the scattering by this process over the bulk scattering.

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JF - Surface Science

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ER -

Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor

Abstract

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