Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

Yu G. Sadofyev; Shane Johnson; S. A. Chaparro; Yu Cao; D. Ding; J. B. Wang; K. Franzreb; Yong-Hang Zhang

doi:10.1063/1.1715153

Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

Yu G. Sadofyev, Shane Johnson, S. A. Chaparro, Yu Cao, D. Ding, J. B. Wang, K. Franzreb, Yong-Hang Zhang

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Abstract

The study of Sb-mediated growth of Al _0.65Ga _0.35As for Sb/III flux ratios from 0-2% and growth temperatures from 580 to 720°C was discussed. The electrical properties and surface morphology were found to be dependent on the growth temperature and the Sb flux. The Sb as an isoelectronic dopant improved electron mobility, whereas, Sb as an surfactant reduced surface roughness. The use of Sb-mediated growth has resulted in improved laser device performance, noticeably in vertical-cavity surface-emitting lasers (VCSEL). The results show that the best improvement occured in 620-680°C temperature region, elliminating the forbidden temperature gap for the device growth effectively.

Original language	English (US)
Pages (from-to)	3546-3548
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1715153
State	Published - May 3 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy",

abstract = "The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0-2% and growth temperatures from 580 to 720°C was discussed. The electrical properties and surface morphology were found to be dependent on the growth temperature and the Sb flux. The Sb as an isoelectronic dopant improved electron mobility, whereas, Sb as an surfactant reduced surface roughness. The use of Sb-mediated growth has resulted in improved laser device performance, noticeably in vertical-cavity surface-emitting lasers (VCSEL). The results show that the best improvement occured in 620-680°C temperature region, elliminating the forbidden temperature gap for the device growth effectively.",

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T1 - Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

AU - Sadofyev, Yu G.

AU - Johnson, Shane

AU - Chaparro, S. A.

AU - Cao, Yu

AU - Ding, D.

AU - Wang, J. B.

AU - Franzreb, K.

AU - Zhang, Yong-Hang

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0-2% and growth temperatures from 580 to 720°C was discussed. The electrical properties and surface morphology were found to be dependent on the growth temperature and the Sb flux. The Sb as an isoelectronic dopant improved electron mobility, whereas, Sb as an surfactant reduced surface roughness. The use of Sb-mediated growth has resulted in improved laser device performance, noticeably in vertical-cavity surface-emitting lasers (VCSEL). The results show that the best improvement occured in 620-680°C temperature region, elliminating the forbidden temperature gap for the device growth effectively.

AB - The study of Sb-mediated growth of Al 0.65Ga 0.35As for Sb/III flux ratios from 0-2% and growth temperatures from 580 to 720°C was discussed. The electrical properties and surface morphology were found to be dependent on the growth temperature and the Sb flux. The Sb as an isoelectronic dopant improved electron mobility, whereas, Sb as an surfactant reduced surface roughness. The use of Sb-mediated growth has resulted in improved laser device performance, noticeably in vertical-cavity surface-emitting lasers (VCSEL). The results show that the best improvement occured in 620-680°C temperature region, elliminating the forbidden temperature gap for the device growth effectively.

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Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

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