Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method

Fan Fan, Yueyang Yu, S. E Hashemi Amiri, Cun-Zheng Ning, David Quandt, Dieter Bimberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A generally applicable release-transfer method is demonstrated to transfer a strained-balanced InGaAs quantum well nano-membrane of 250 nm in thickness for the fabrication of a nano-ring laser with 400 nm ring-thickness, operating at room temperature.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period6/5/166/10/16

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fan, F., Yu, Y., Amiri, S. E. H., Ning, C-Z., Quandt, D., & Bimberg, D. (2016). Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788500] Institute of Electrical and Electronics Engineers Inc..