Abstract

A generally applicable release-transfer method is demonstrated to transfer a strained-balanced InGaAs quantum well nano-membrane of 250 nm in thickness for the fabrication of a nano-ring laser with 400 nm ring-thickness, operating at room temperature.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period6/5/166/10/16

Fingerprint

Ring lasers
ring lasers
Semiconductor quantum wells
Semiconductor materials
membranes
Membranes
Fabrication
room temperature
quantum wells
Temperature
fabrication
rings

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fan, F., Yu, Y., Amiri, S. E. H., Ning, C-Z., Quandt, D., & Bimberg, D. (2016). Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788500] Institute of Electrical and Electronics Engineers Inc..

Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. / Fan, Fan; Yu, Yueyang; Amiri, S. E Hashemi; Ning, Cun-Zheng; Quandt, David; Bimberg, Dieter.

2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7788500.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, F, Yu, Y, Amiri, SEH, Ning, C-Z, Quandt, D & Bimberg, D 2016, Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. in 2016 Conference on Lasers and Electro-Optics, CLEO 2016., 7788500, Institute of Electrical and Electronics Engineers Inc., 2016 Conference on Lasers and Electro-Optics, CLEO 2016, San Jose, United States, 6/5/16.
Fan F, Yu Y, Amiri SEH, Ning C-Z, Quandt D, Bimberg D. Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7788500
Fan, Fan ; Yu, Yueyang ; Amiri, S. E Hashemi ; Ning, Cun-Zheng ; Quandt, David ; Bimberg, Dieter. / Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method. 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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abstract = "A generally applicable release-transfer method is demonstrated to transfer a strained-balanced InGaAs quantum well nano-membrane of 250 nm in thickness for the fabrication of a nano-ring laser with 400 nm ring-thickness, operating at room temperature.",
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AU - Quandt, David

AU - Bimberg, Dieter

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