TY - GEN
T1 - Room temperature operation of semiconductor nano-ring lasers fabricated through a general applicable membrane release and transfer method
AU - Fan, Fan
AU - Yu, Yueyang
AU - Amiri, S. E Hashemi
AU - Ning, Cun-Zheng
AU - Quandt, David
AU - Bimberg, Dieter
N1 - Funding Information:
This work was partly supported by the Army Research Office Air Force Office of Scientific Research (W911NF-13-1-0278) and by SFB 787 of DFG.
Publisher Copyright:
© 2016 OSA.
PY - 2016/12/16
Y1 - 2016/12/16
N2 - A generally applicable release-transfer method is demonstrated to transfer a strained-balanced InGaAs quantum well nano-membrane of 250 nm in thickness for the fabrication of a nano-ring laser with 400 nm ring-thickness, operating at room temperature.
AB - A generally applicable release-transfer method is demonstrated to transfer a strained-balanced InGaAs quantum well nano-membrane of 250 nm in thickness for the fabrication of a nano-ring laser with 400 nm ring-thickness, operating at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=85010644584&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010644584&partnerID=8YFLogxK
U2 - 10.1364/cleo_si.2016.sf2l.1
DO - 10.1364/cleo_si.2016.sf2l.1
M3 - Conference contribution
AN - SCOPUS:85010644584
T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
Y2 - 5 June 2016 through 10 June 2016
ER -