Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Z. Li; Y. Zhao; J. D. Gallagher; D. Lombardo; A. Sarangan; Imad Agha; J. Kouvetakis; J. Menéndez; J. Mathews

doi:10.1063/5.0094589

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, A. Sarangan, Imad Agha, J. Kouvetakis, J. Menéndez, J. Mathews

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1 Scopus citations

Abstract

Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.

Original language	English (US)
Article number	075016
Journal	AIP Advances
Volume	12
Issue number	7
DOIs	https://doi.org/10.1063/5.0094589
State	Published - Jul 1 2022

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General Physics and Astronomy

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title = "Room temperature emission spectroscopy of GeSn waveguides under optical pumping",

abstract = "Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.",

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T1 - Room temperature emission spectroscopy of GeSn waveguides under optical pumping

AU - Li, Z.

AU - Zhao, Y.

AU - Gallagher, J. D.

AU - Lombardo, D.

AU - Sarangan, A.

AU - Agha, Imad

AU - Kouvetakis, J.

AU - Menéndez, J.

AU - Mathews, J.

PY - 2022/7/1

Y1 - 2022/7/1

N2 - Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.

AB - Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.

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Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Abstract

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