Waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 5.4%-6.2% and grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous-wave laser, and the waveguide emission spectrum was collected and analyzed. The results indicate a non-linear power increase via higher injection-level at room temperature. Comprehensive theoretical models for the waveguide emission power dependence were developed to reproduce experimental data and provide an understanding of the nonlinear power dependence.
ASJC Scopus subject areas
- Physics and Astronomy(all)