Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, Hiroshi Amano

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Ga1-xInxN epilayers (x = 0.09 or 0.14) grown on c-plane GaN layers with different densities of threading dislocations have been investigated by real-time x-ray reflectivity during metal-organic vapor phase epitaxial growth. We found that the density of pre-existing threading dislocations in GaN plays an important role in the strain relaxation of Ga1-xInxN. Critical thicknesses were obtained and compared with theoretical predictions using the mechanical equilibrium model and the energy balance model. The critical thickness of GaInN varies inversely with dislocation density in the GaN sublayer. When the threading dislocation density in the sublayer was reduced by three orders of magnitude, the photoluminescence intensity of the Ga0.86In0.14N epilayer was improved by a factor of ten.

Original languageEnglish (US)
Article number262105
JournalApplied Physics Letters
Volume110
Issue number26
DOIs
StatePublished - Jun 26 2017
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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