Abstract
Statistical circuit analysis and optimization are critical for robust nanoscale CMOS design. To accurately perform such analysis, primary process variation sources need to be identified and modeled for further circuit simulation. In this work, a rigorous method to extract process variations from in situ IV measurements is present. Transistor statistics are collected from a test chip fabricated in a 65-nm process. Gate length (L), threshold voltage (Vth) and mobility (μ) are recognized as the leading variation sources, due to the tremendous process challenges in lithography, channel doping, and the stress engineering. To decompose these variations, three critical IV points from the cut-off and linear regions are identified. The extracted L, Vth and μ variations are normally distributed, with negligible spatial correlation. By including extracted variations in the nominal model file, accurate prediction of the change of drive current in all operation regions and process corners is achieved. The new extraction method guarantees excellent model matching with hardware for further statistical circuit analysis.
Original language | English (US) |
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Article number | 4773506 |
Pages (from-to) | 196-203 |
Number of pages | 8 |
Journal | IEEE Transactions on Semiconductor Manufacturing |
Volume | 22 |
Issue number | 1 |
DOIs | |
State | Published - Feb 2009 |
Keywords
- Compact modeling
- Process variation
- Spatial correlation
- Threshold voltage variation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering