Residual defects in SIMOX: Threading dislocations and pipes

P. Roitman, M. Edelstein, Stephen Krause, S. Visitserngtrukul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In the past few years, due to improved control of the ion implantation process and improved annealing sequences, a qualitative improvement has been realized in the structural quality of SIMOX films. The dense network of oxide precipitates and threading dislocations in the top silicon can be annealed out, reducing the dislocation density from ≈ 1010/cm2 to ≈ 105/cm2 or less1. CMOS transistors and circuits have been successfully fabricated in this material2. However, bipolar devices are sensitive to defect densities in this range, as is VLSI yield. Therefore the defect density must be monitored and reduced. We discuss below some techniques for monitoring dislocations and stacking faults in SIMOX films. Also, a different type of defect, a silicon "pipe" running through the buried oxide has been observed. The origin of these defects, and a technique for detecting them, will be described.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages154-155
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period10/2/9010/4/90

Fingerprint

Defect density
Silicon
Oxides
Pipe
Defects
Stacking faults
Dislocations (crystals)
Ion implantation
Precipitates
Transistors
Annealing
Networks (circuits)
Monitoring

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Roitman, P., Edelstein, M., Krause, S., & Visitserngtrukul, S. (1990). Residual defects in SIMOX: Threading dislocations and pipes. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 154-155). [145758] (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145758

Residual defects in SIMOX : Threading dislocations and pipes. / Roitman, P.; Edelstein, M.; Krause, Stephen; Visitserngtrukul, S.

1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. p. 154-155 145758 (1990 IEEE SOS/SOI Technology Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Roitman, P, Edelstein, M, Krause, S & Visitserngtrukul, S 1990, Residual defects in SIMOX: Threading dislocations and pipes. in 1990 IEEE SOS/SOI Technology Conference, Proceedings., 145758, 1990 IEEE SOS/SOI Technology Conference, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 154-155, 1990 IEEE SOS/SOI Technology Conference, Key West, United States, 10/2/90. https://doi.org/10.1109/SOSSOI.1990.145758
Roitman P, Edelstein M, Krause S, Visitserngtrukul S. Residual defects in SIMOX: Threading dislocations and pipes. In 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc. 1990. p. 154-155. 145758. (1990 IEEE SOS/SOI Technology Conference, Proceedings). https://doi.org/10.1109/SOSSOI.1990.145758
Roitman, P. ; Edelstein, M. ; Krause, Stephen ; Visitserngtrukul, S. / Residual defects in SIMOX : Threading dislocations and pipes. 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. pp. 154-155 (1990 IEEE SOS/SOI Technology Conference, Proceedings).
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