TY - GEN
T1 - Residual defects in SIMOX
T2 - 1990 IEEE SOS/SOI Technology Conference
AU - Roitman, P.
AU - Edelstein, M.
AU - Krause, S.
AU - Visitserngtrukul, S.
N1 - Funding Information:
This work was supported in part by DNA contract DNA-IACRO-88-800. The staff support and use of the National Center for High Resolution Electron Microscopy supported by Arizona State University and the National Science Foundation is also appreciated.
Publisher Copyright:
© 1990 IEEE.
PY - 1990
Y1 - 1990
N2 - In the past few years, due to improved control of the ion implantation process and improved annealing sequences, a qualitative improvement has been realized in the structural quality of SIMOX films. The dense network of oxide precipitates and threading dislocations in the top silicon can be annealed out, reducing the dislocation density from ≈ 1010/cm2 to ≈ 105/cm2 or less1. CMOS transistors and circuits have been successfully fabricated in this material2. However, bipolar devices are sensitive to defect densities in this range, as is VLSI yield. Therefore the defect density must be monitored and reduced. We discuss below some techniques for monitoring dislocations and stacking faults in SIMOX films. Also, a different type of defect, a silicon "pipe" running through the buried oxide has been observed. The origin of these defects, and a technique for detecting them, will be described.
AB - In the past few years, due to improved control of the ion implantation process and improved annealing sequences, a qualitative improvement has been realized in the structural quality of SIMOX films. The dense network of oxide precipitates and threading dislocations in the top silicon can be annealed out, reducing the dislocation density from ≈ 1010/cm2 to ≈ 105/cm2 or less1. CMOS transistors and circuits have been successfully fabricated in this material2. However, bipolar devices are sensitive to defect densities in this range, as is VLSI yield. Therefore the defect density must be monitored and reduced. We discuss below some techniques for monitoring dislocations and stacking faults in SIMOX films. Also, a different type of defect, a silicon "pipe" running through the buried oxide has been observed. The origin of these defects, and a technique for detecting them, will be described.
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U2 - 10.1109/SOSSOI.1990.145758
DO - 10.1109/SOSSOI.1990.145758
M3 - Conference contribution
AN - SCOPUS:84953823347
T3 - 1990 IEEE SOS/SOI Technology Conference, Proceedings
SP - 154
EP - 155
BT - 1990 IEEE SOS/SOI Technology Conference, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 2 October 1990 through 4 October 1990
ER -