Abstract
Fluorine contamination was removed from a Si(100) surface by an atomic H flux. The surface was intentionally contaminated to approximate the residual fluorine concentration remaining after a concentrated HF last process. By dipping the wafers in concentrated HF the thin oxide was removed and replaced with a hydrogen and fluorine terminated surface. This surface was then either vacuum annealed or exposed to a 20 Watt rf excited H-plasma at 50 mTorr, in order to achieve an atomically clean surface. The substrate temperature during the H-plasma exposure and vacuum anneal was 450°C. The surface chemistry was characterized with x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), and angle-resolved UV photoemission spectroscopy (ARUPS). The surface symmetry was characterized with low energy electron diffraction (LEED). Before the H-plasma exposure, the XPS spectra indicated Si-F bonding, and a 1×1 LEED diffraction pattern was observed. Immediately following the H-plasma exposure, the fluorine concentration was reduced below detection limits of XPS, and the surface showed a 2×1 reconstruction. A mechanism is proposed by which molecular HF results from atomic hydrogen interactions with fluorine on the surface.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 357-362 |
Number of pages | 6 |
Volume | 386 |
State | Published - 1995 |
Externally published | Yes |
Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995 |
Other
Other | Proceedings of the 1995 MRS Spring Meeting |
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City | San Francisco, CA, USA |
Period | 4/17/95 → 4/21/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials