Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma

J. P. Barnak, S. King, J. Montgomery, Ja Hum Ku, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Fluorine contamination was removed from a Si(100) surface by an atomic H flux. The surface was intentionally contaminated to approximate the residual fluorine concentration remaining after a concentrated HF last process. By dipping the wafers in concentrated HF the thin oxide was removed and replaced with a hydrogen and fluorine terminated surface. This surface was then either vacuum annealed or exposed to a 20 Watt rf excited H-plasma at 50 mTorr, in order to achieve an atomically clean surface. The substrate temperature during the H-plasma exposure and vacuum anneal was 450°C. The surface chemistry was characterized with x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), and angle-resolved UV photoemission spectroscopy (ARUPS). The surface symmetry was characterized with low energy electron diffraction (LEED). Before the H-plasma exposure, the XPS spectra indicated Si-F bonding, and a 1×1 LEED diffraction pattern was observed. Immediately following the H-plasma exposure, the fluorine concentration was reduced below detection limits of XPS, and the surface showed a 2×1 reconstruction. A mechanism is proposed by which molecular HF results from atomic hydrogen interactions with fluorine on the surface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages357-362
Number of pages6
Volume386
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/17/954/21/95

Fingerprint

Fluorine
Hydrogen
Plasmas
Photoelectron spectroscopy
Low energy electron diffraction
X rays
Vacuum
Auger electron spectroscopy
Surface chemistry
Ultraviolet spectroscopy
Oxides
Diffraction patterns
Contamination
Fluxes
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Barnak, J. P., King, S., Montgomery, J., Ku, J. H., & Nemanich, R. (1995). Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma. In Materials Research Society Symposium - Proceedings (Vol. 386, pp. 357-362). Materials Research Society.

Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma. / Barnak, J. P.; King, S.; Montgomery, J.; Ku, Ja Hum; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. p. 357-362.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Barnak, JP, King, S, Montgomery, J, Ku, JH & Nemanich, R 1995, Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma. in Materials Research Society Symposium - Proceedings. vol. 386, Materials Research Society, pp. 357-362, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 4/17/95.
Barnak JP, King S, Montgomery J, Ku JH, Nemanich R. Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma. In Materials Research Society Symposium - Proceedings. Vol. 386. Materials Research Society. 1995. p. 357-362
Barnak, J. P. ; King, S. ; Montgomery, J. ; Ku, Ja Hum ; Nemanich, Robert. / Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma. Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. pp. 357-362
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