Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Fabio Alessio Marino; Diego Guerra; Stephen Goodnick; Marco Saraniti

doi:10.1109/IRPS.2010.5488779

Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Fabio Alessio Marino, Diego Guerra, Stephen Goodnick, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

Original language	English (US)
Title of host publication	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages	516-521
Number of pages	6
DOIs	https://doi.org/10.1109/IRPS.2010.5488779
State	Published - Oct 20 2010
Event	2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada Duration: May 2 2010 → May 6 2010

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2010 IEEE International Reliability Physics Symposium, IRPS 2010
Country/Territory	Canada
City	Garden Grove, CA
Period	5/2/10 → 5/6/10

Keywords

Dislocations
GaN
High-electron mobility transistor (HEMT)
High-frequency
Monte Carlo
Numerical simulation

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2010.5488779

Cite this

Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation. / Marino, Fabio Alessio; Guerra, Diego; Goodnick, Stephen et al.
2010 IEEE International Reliability Physics Symposium, IRPS 2010. 2010. p. 516-521 5488779 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Marino, FA, Guerra, D, Goodnick, S & Saraniti, M 2010, Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation. in 2010 IEEE International Reliability Physics Symposium, IRPS 2010., 5488779, IEEE International Reliability Physics Symposium Proceedings, pp. 516-521, 2010 IEEE International Reliability Physics Symposium, IRPS 2010, Garden Grove, CA, Canada, 5/2/10. https://doi.org/10.1109/IRPS.2010.5488779

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abstract = "Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.",

keywords = "Dislocations, GaN, High-electron mobility transistor (HEMT), High-frequency, Monte Carlo, Numerical simulation",

author = "Marino, {Fabio Alessio} and Diego Guerra and Stephen Goodnick and Marco Saraniti",

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N2 - Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

AB - Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

KW - Dislocations

KW - GaN

KW - High-electron mobility transistor (HEMT)

KW - High-frequency

KW - Monte Carlo

KW - Numerical simulation

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Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation

Abstract

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Keywords

ASJC Scopus subject areas

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