Abstract

Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In particular, we report simulation results for high-frequency, high-power state-of-the-art GaN HEMTs focusing our analysis on the effects of that threading edge dislocations on the DC and RF performance of state of the art technologies. A complete characterization of an InGaN back - barrier device has been performed, and the influence of disclocation density on device performance analyzed. Furthermore, a device structure based on the N-face configuration is analyzed.

Original languageEnglish (US)
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages516-521
Number of pages6
DOIs
StatePublished - Oct 20 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: May 2 2010May 6 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period5/2/105/6/10

Keywords

  • Dislocations
  • GaN
  • High-electron mobility transistor (HEMT)
  • High-frequency
  • Monte Carlo
  • Numerical simulation

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Marino, F. A., Guerra, D., Goodnick, S., & Saraniti, M. (2010). Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 516-521). [5488779] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488779