Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lu, Izak Baranowski, Jossue Montes, Tsung Han Yang, Brendan P. Gunning, Dan Koleske, Yuji Zhao

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10 Scopus citations

Abstract

We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density-voltage (J-V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

Original languageEnglish (US)
Article number233511
JournalApplied Physics Letters
Volume111
Issue number23
DOIs
StatePublished - Dec 4 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Huang, X., Fu, H., Chen, H., Lu, Z., Baranowski, I., Montes, J., Yang, T. H., Gunning, B. P., Koleske, D., & Zhao, Y. (2017). Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress. Applied Physics Letters, 111(23), [233511]. https://doi.org/10.1063/1.5006650