Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV

J. Bai, M. Dudley, L. Chen, Brian Skromme, P. J. Hartlieb, E. Michaels, J. W. Kolis, B. Wagner, R. F. Davis, U. Chowdhury, R. D. Dupuis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

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Engineering & Materials Science

Chemical Compounds