Relating data characteristics to transition activity in high-level static CMOS design

Russell Henning, Chaitali Chakrabarti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Significant power reduction can be obtained in the datapath of a CMOS VLSI circuit if data characteristics are carefully exploited. An improved approach that achieves such reduction by using a new model relating important data characteristics to the transition activity in static CMOS circuits is presented. Specifically, relationships between fixed-point, two's complement data and 0 → 1 transition activity in static CMOS circuits are identified. Models for computing transition activity in terms of a set of statistical parameters are developed, and their performance compared with the Dual Bit Type model. Then the use of the relationships and models to analyze and significantly reduce 0 → 1 transition activity with little computational effort is illustrated by several, high-level synthesis examples.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on VLSI Design
Place of PublicationLos Alamitos, CA, United States
PublisherIEEE
Pages38-43
Number of pages6
StatePublished - 2000
EventThe 13th International Conference on VLSI Design: Wireless and Digital Imaging in the Millennium - Calcutta, India
Duration: Jan 3 2000Jan 7 2000

Other

OtherThe 13th International Conference on VLSI Design: Wireless and Digital Imaging in the Millennium
CityCalcutta, India
Period1/3/001/7/00

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Networks (circuits)
VLSI circuits
High level synthesis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Henning, R., & Chakrabarti, C. (2000). Relating data characteristics to transition activity in high-level static CMOS design. In Proceedings of the IEEE International Conference on VLSI Design (pp. 38-43). Los Alamitos, CA, United States: IEEE.

Relating data characteristics to transition activity in high-level static CMOS design. / Henning, Russell; Chakrabarti, Chaitali.

Proceedings of the IEEE International Conference on VLSI Design. Los Alamitos, CA, United States : IEEE, 2000. p. 38-43.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Henning, R & Chakrabarti, C 2000, Relating data characteristics to transition activity in high-level static CMOS design. in Proceedings of the IEEE International Conference on VLSI Design. IEEE, Los Alamitos, CA, United States, pp. 38-43, The 13th International Conference on VLSI Design: Wireless and Digital Imaging in the Millennium, Calcutta, India, 1/3/00.
Henning R, Chakrabarti C. Relating data characteristics to transition activity in high-level static CMOS design. In Proceedings of the IEEE International Conference on VLSI Design. Los Alamitos, CA, United States: IEEE. 2000. p. 38-43
Henning, Russell ; Chakrabarti, Chaitali. / Relating data characteristics to transition activity in high-level static CMOS design. Proceedings of the IEEE International Conference on VLSI Design. Los Alamitos, CA, United States : IEEE, 2000. pp. 38-43
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