Abstract

In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.

Original languageEnglish (US)
Article number8068948
Pages (from-to)1646-1652
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume7
Issue number6
DOIs
StatePublished - Nov 1 2017

Keywords

  • Epitaxial layers
  • gallium compounds
  • high-temperature semiconductors
  • photovoltaic cells
  • solar energy
  • wide band gap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C., & Goodnick, S. (2017). Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. IEEE Journal of Photovoltaics, 7(6), 1646-1652. [8068948]. https://doi.org/10.1109/JPHOTOV.2017.2756057