Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Joshua J. Williams; Heather McFavilen; Alec M. Fischer; Ding Ding; Steven Young; Ehsan Vadiee; Fernando Ponce; Chantal Arena; Christiana Honsberg; Stephen Goodnick

doi:10.1109/JPHOTOV.2017.2756057

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Joshua J. Williams, Heather McFavilen, Alec M. Fischer, Ding Ding, Steven Young, Ehsan Vadiee, Fernando Ponce, Chantal Arena, Christiana Honsberg, Stephen Goodnick

Research output: Contribution to journal › Article

10 Scopus citations

Abstract

In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.

Original language	English (US)
Article number	8068948
Pages (from-to)	1646-1652
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	7
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2756057
State	Published - Nov 1 2017

Keywords

Epitaxial layers
gallium compounds
high-temperature semiconductors
photovoltaic cells
solar energy
wide band gap semiconductors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C., & Goodnick, S. (2017). Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. IEEE Journal of Photovoltaics, 7(6), 1646-1652. [8068948]. https://doi.org/10.1109/JPHOTOV.2017.2756057

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M.; Ding, Ding; Young, Steven; Vadiee, Ehsan; Ponce, Fernando; Arena, Chantal; Honsberg, Christiana ; Goodnick, Stephen.

In: IEEE Journal of Photovoltaics, Vol. 7, No. 6, 8068948, 01.11.2017, p. 1646-1652.

Research output: Contribution to journal › Article

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abstract = "In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.",

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