Abstract

In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.

Original languageEnglish (US)
Article number8068948
Pages (from-to)1646-1652
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume7
Issue number6
DOIs
StatePublished - Nov 1 2017

Fingerprint

High temperature applications
refractories
Refractory materials
Solar cells
solar cells
sun
Sun
solar simulators
electric potential
dark current
Temperature
electrical measurement
temperature
quantum efficiency
Dark currents
Voltage measurement
Chemical stability
Electric potential
Electric current measurement
physical properties

Keywords

  • Epitaxial layers
  • gallium compounds
  • high-temperature semiconductors
  • photovoltaic cells
  • solar energy
  • wide band gap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., ... Goodnick, S. (2017). Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. IEEE Journal of Photovoltaics, 7(6), 1646-1652. [8068948]. https://doi.org/10.1109/JPHOTOV.2017.2756057

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M.; Ding, Ding; Young, Steven; Vadiee, Ehsan; Ponce, Fernando; Arena, Chantal; Honsberg, Christiana; Goodnick, Stephen.

In: IEEE Journal of Photovoltaics, Vol. 7, No. 6, 8068948, 01.11.2017, p. 1646-1652.

Research output: Contribution to journalArticle

Williams, JJ, McFavilen, H, Fischer, AM, Ding, D, Young, S, Vadiee, E, Ponce, F, Arena, C, Honsberg, C & Goodnick, S 2017, 'Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications', IEEE Journal of Photovoltaics, vol. 7, no. 6, 8068948, pp. 1646-1652. https://doi.org/10.1109/JPHOTOV.2017.2756057
Williams JJ, McFavilen H, Fischer AM, Ding D, Young S, Vadiee E et al. Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. IEEE Journal of Photovoltaics. 2017 Nov 1;7(6):1646-1652. 8068948. https://doi.org/10.1109/JPHOTOV.2017.2756057
Williams, Joshua J. ; McFavilen, Heather ; Fischer, Alec M. ; Ding, Ding ; Young, Steven ; Vadiee, Ehsan ; Ponce, Fernando ; Arena, Chantal ; Honsberg, Christiana ; Goodnick, Stephen. / Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. In: IEEE Journal of Photovoltaics. 2017 ; Vol. 7, No. 6. pp. 1646-1652.
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