Abstract
In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.
| Original language | English (US) |
|---|---|
| Article number | 8068948 |
| Pages (from-to) | 1646-1652 |
| Number of pages | 7 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 7 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 1 2017 |
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Keywords
- Epitaxial layers
- gallium compounds
- high-temperature semiconductors
- photovoltaic cells
- solar energy
- wide band gap semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications. / Williams, Joshua J.; McFavilen, Heather; Fischer, Alec M.; Ding, Ding; Young, Steven; Vadiee, Ehsan; Ponce, Fernando; Arena, Chantal; Honsberg, Christiana; Goodnick, Stephen.
In: IEEE Journal of Photovoltaics, Vol. 7, No. 6, 8068948, 01.11.2017, p. 1646-1652.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications
AU - Williams, Joshua J.
AU - McFavilen, Heather
AU - Fischer, Alec M.
AU - Ding, Ding
AU - Young, Steven
AU - Vadiee, Ehsan
AU - Ponce, Fernando
AU - Arena, Chantal
AU - Honsberg, Christiana
AU - Goodnick, Stephen
PY - 2017/11/1
Y1 - 2017/11/1
N2 - In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.
AB - In$-{x}$Ga1- $-{x}$N solar cells are ideal for use in extreme temperature applications due to their wide band gap and chemical stability. In this paper, the details are given for the growth, fabrication, and characterization of In $-{x}$Ga1- $-{x}$N multiple quantum well solar cells designed for high temperatures. Materials characterization confirms basic optical and physical properties of the layers. External quantum efficiency, dark current-voltage, 1-sun current-voltage, and 300-sun high intensity pulsed solar simulator current-voltage measurements were taken at varied temperatures. Correlations are made between different characterization methods to draw conclusions about device behavior. Photovoltaic performance for $V-{{\rm{OC}}}$, $W-{{\rm{OC}}}$, $J-{{\rm{SC}}}$, and fill factor is given at multiple temperatures from 25 °C to 600 °C.
KW - Epitaxial layers
KW - gallium compounds
KW - high-temperature semiconductors
KW - photovoltaic cells
KW - solar energy
KW - wide band gap semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85036669254&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85036669254&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2017.2756057
DO - 10.1109/JPHOTOV.2017.2756057
M3 - Article
AN - SCOPUS:85036669254
VL - 7
SP - 1646
EP - 1652
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
IS - 6
M1 - 8068948
ER -