Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon

M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams, C. A. Evans

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

Fluorine distribution profiles for silicon implanted with BF +2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).

Original languageEnglish (US)
Pages (from-to)188-192
Number of pages5
JournalJournal of Applied Physics
Volume50
Issue number1
DOIs
StatePublished - Dec 1 1979
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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