Recombination processes of the broadband and 1.681 eV optical centers in diamond films

L. Bergman, M. T. McClure, J. T. Glass, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Micro- and macro-photoluminescence techniques were employed in this research to investigate the role of nitrogen-doping on the optical spectra of chemical vapor deposited diamond films and to determine whether the origin of the broadband luminescence is due to vibronic interaction of the nitrogen centers. The temperature behavior of the broadband PL and of the 1.681 eV silicon related optical center were analyzed. The intensity of the broadband was found to exhibit a temperature dependence characteristic of optical emission from a continuous distribution of gap states while the temperature dependence of the 1.681 eV band followed the Boltzmann quenching process.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages663-668
Number of pages6
Volume339
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Recombination processes of the broadband and 1.681 eV optical centers in diamond films'. Together they form a unique fingerprint.

Cite this