Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

H. S.Philip Wong; Sang Bum Kim; Byoungil Lee; Marissa A. Caldwell; Jiale Liang; Yi Wu; Rakesh Gnana David Jeyasingh; Shimeng Yu

doi:10.1109/ICSICT.2010.5667542

Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

H. S.Philip Wong, Sang Bum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Gnana David Jeyasingh, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

Original language	English (US)
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1055-1060
Number of pages	6
DOIs	https://doi.org/10.1109/ICSICT.2010.5667542
State	Published - 2010
Externally published	Yes
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Nov 1 2010 → Nov 4 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	11/1/10 → 11/4/10

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2010.5667542

Cite this

Wong, H. S. P., Kim, S. B., Lee, B., Caldwell, M. A., Liang, J., Wu, Y., Jeyasingh, R. G. D., & Yu, S. (2010). Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM). In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1055-1060). Article 5667542 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667542

Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM). / Wong, H. S.Philip; Kim, Sang Bum; Lee, Byoungil et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1055-1060 5667542 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wong, HSP, Kim, SB, Lee, B, Caldwell, MA, Liang, J, Wu, Y, Jeyasingh, RGD & Yu, S 2010, Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM). in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667542, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1055-1060, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667542

Wong HSP, Kim SB, Lee B, Caldwell MA, Liang J, Wu Y et al. Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM). In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1055-1060. 5667542. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667542

Wong, H. S.Philip ; Kim, Sang Bum ; Lee, Byoungil et al. / Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM). ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1055-1060 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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AB - Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

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Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

Abstract

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