Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

H. S.Philip Wong, Sang Bum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Gnana David Jeyasingh, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

Original languageEnglish (US)
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1055-1060
Number of pages6
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Nov 1 2010Nov 4 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/TerritoryChina
CityShanghai
Period11/1/1011/4/10

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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