Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: Steps to next-generation PV cells

Nasser H. Karam, Richard R. King, Moran Haddad, James H. Ermer, Hojun Yoon, Hector L. Cotal, Rengarajan Sudharsanan, Jack W. Eldredge, Kenneth Edmondson, David E. Joslin, Dimitri D. Krut, Mark Takahashi, Warren Nishikawa, Mark Gillanders, Jennifer Granata, Peter Hebert, B. Terence Cavicchi, David R. Lillington

Research output: Contribution to journalArticlepeer-review

82 Scopus citations


Dual-junction Ga0.5In0.5P/GaAs solar cells on Ge substrates have rapidly gone from small, high-efficiency laboratory cells, to large-area, high-efficiency cells manufactured at Spectrolab in high volume. Over 500,000 of these dual-junction (DJ) cells with 27-cm2 area have been produced, with average AM0 load point efficiency of 21.4%. The next step in the evolution of this type of multijunction solar cell has been taken, with the development of triple-junction (TJ) Ga0.5In0.5P/GaAs/Ge cells. The addition of the germanium third junction, plus several significant improvements in the device structure, have led to a measured efficiency of 27.0% (AM0, 28 °C) at Spectrolab on large-area (>30 cm2) TJ cells. The TJ cell is now in production at Spectrolab. Ga0.5In0.5P/GaAs/Ge cells are viable not only for non-concentrating space applications, but also for terrestrial and space concentrator systems. Efficiencies up to 32.3% at 47 suns under the terrestrial AM1.5D spectrum have been achieved.

Original languageEnglish (US)
Pages (from-to)453-466
Number of pages14
JournalSolar Energy Materials and Solar Cells
Issue number1-4
StatePublished - Feb 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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