Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study

Meijun Lu, Ujjwal Das, Stuart Bowden, Robert Birkmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Rear surface passivation by deposited intrinsic amorphous silicon (a-Si) buffer layer in interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells significantly improves open circuit voltage (VOC) and short circuit current (JSC) but can lead to very low fill factor (FF) with an 'S' shape J-V curve. In this paper, methods to optimize IBC-SHJ solar cell with improved FF are discussed and guided by two-dimensional numerical modelling. Two approaches to improve FF by modifying the buffer layer are evaluated: (1) increased conductivity, or (2) reduced band gap. Experimental results show that replacing the intrinsic a-Si layer in emitter with lightly doped p-type a-Si layer greatly improves fill factor, which is consistent with modelling prediction. However, the VOC and JSC are limited by the high recombination velocity of the unpassivated gap between the emitter and contact strips. The importance of gap passivation to achieve high efficiency in the IBC-SHJ structure was verified by 2D device simulation. The band gap of the intrinsic buffer layers have been reduced by changing the deposition conditions without substantially decreasing the passivation quality.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Buffer layers
Amorphous silicon
Passivation
Heterojunctions
Solar cells
Volatile organic compounds
Silicon
Energy gap
Open circuit voltage
Short circuit currents

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lu, M., Das, U., Bowden, S., & Birkmire, R. (2008). Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922757] https://doi.org/10.1109/PVSC.2008.4922757

Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study. / Lu, Meijun; Das, Ujjwal; Bowden, Stuart; Birkmire, Robert.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922757.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lu, M, Das, U, Bowden, S & Birkmire, R 2008, Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922757, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922757
Lu M, Das U, Bowden S, Birkmire R. Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922757 https://doi.org/10.1109/PVSC.2008.4922757
Lu, Meijun ; Das, Ujjwal ; Bowden, Stuart ; Birkmire, Robert. / Rear surface passivation of interdigitated back contact silicon heterojunction solar cell and 2D simulation study. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
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