Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

Bo He; Zhong Quan Ma; Jing Xu; Lei Zhao; Nan Sheng Zhang; Feng Li; Cheng Shen; Ling Shen; Xia Jie Meng; Cheng Yue Zhou; Zheng Shan Yu; Yan Ting Yin

doi:10.1016/j.spmi.2009.04.013

Realization and characterization of an ITO/AZO/SiO₂ / p - Si SIS heterojunction

Bo He, Zhong Quan Ma, Jing Xu, Lei Zhao, Nan Sheng Zhang, Feng Li, Cheng Shen, Ling Shen, Xia Jie Meng, Cheng Yue Zhou, Zheng Shan Yu, Yan Ting Yin

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A novel ITO/AZO/SiO₂/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10^-5 A, respectively, and the value of I_F/I_R (I_F and I_R stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

Original language	English (US)
Pages (from-to)	664-671
Number of pages	8
Journal	Superlattices and Microstructures
Volume	46
Issue number	4
DOIs	https://doi.org/10.1016/j.spmi.2009.04.013
State	Published - Oct 2009
Externally published	Yes

Keywords

Al-doped ZnO (AZO)
Current-voltage (I - V) characteristics
Indium tin oxide (ITO)
SIS heterojunction
Sputtering

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2009.04.013

Cite this

@article{6b762fe859ed4dda9fed3f4081f991a8,

title = "Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction",

abstract = "A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown",

keywords = "Al-doped ZnO (AZO), Current-voltage (I - V) characteristics, Indium tin oxide (ITO), SIS heterojunction, Sputtering",

author = "Bo He and Ma, {Zhong Quan} and Jing Xu and Lei Zhao and Zhang, {Nan Sheng} and Feng Li and Cheng Shen and Ling Shen and Meng, {Xia Jie} and Zhou, {Cheng Yue} and Yu, {Zheng Shan} and Yin, {Yan Ting}",

note = "Funding Information: This work was partly supported by the Natural Science Foundation of China (No. 60876045), Shanghai Leading Academic Discipline Project (S30105), Innovation Foundation of Shanghai Education Committee (No. 08YZ12), and R&D Foundation of SHU-SOENs PV Joint Laboratory (SS-E0700601). ",

year = "2009",

month = oct,

doi = "10.1016/j.spmi.2009.04.013",

language = "English (US)",

volume = "46",

pages = "664--671",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

AU - He, Bo

AU - Ma, Zhong Quan

AU - Xu, Jing

AU - Zhao, Lei

AU - Zhang, Nan Sheng

AU - Li, Feng

AU - Shen, Cheng

AU - Shen, Ling

AU - Meng, Xia Jie

AU - Zhou, Cheng Yue

AU - Yu, Zheng Shan

AU - Yin, Yan Ting

N1 - Funding Information: This work was partly supported by the Natural Science Foundation of China (No. 60876045), Shanghai Leading Academic Discipline Project (S30105), Innovation Foundation of Shanghai Education Committee (No. 08YZ12), and R&D Foundation of SHU-SOENs PV Joint Laboratory (SS-E0700601).

PY - 2009/10

Y1 - 2009/10

N2 - A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

AB - A novel ITO/AZO/SiO2/p-Si SIS heterojunction has been fabricated by low temperature thermal growth of an ultrathin silicon dioxide and RF sputtering deposition of ITO/AZO double films on a p-Si texturized substrate. The crystalline structure and the optical and electrical properties of the ITO/AZO antireflection films were characterized by X-ray diffraction (XRD), UV-VIS spectrophotometry, and four-point probe measurements, respectively. The results show that the ITO/AZO films are of good quality. The electrical junction properties were investigated by I - V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current of this diode are 2.3 and 1.075×10-5 A, respectively, and the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at 2 V is found to be as high as 16.55. The junction shows fairly good rectifying behavior, indicating the formation of a diode between AZO and p-Si. High photocurrent is obtained under a reverse bias when the crystalline quality of ITO/AZO double films is good enough to transmit the light into the p-Si. Crown

KW - Al-doped ZnO (AZO)

KW - Current-voltage (I - V) characteristics

KW - Indium tin oxide (ITO)

KW - SIS heterojunction

KW - Sputtering

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U2 - 10.1016/j.spmi.2009.04.013

DO - 10.1016/j.spmi.2009.04.013

M3 - Article

AN - SCOPUS:70249112147

SN - 0749-6036

VL - 46

SP - 664

EP - 671

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -