Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

David C. Nesting; John Kouvetakis; Sean Hearne; E. Chason; I. S T Tsong

doi:10.1116/1.581661

Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

David C. Nesting, John Kouvetakis, Sean Hearne, E. Chason, I. S T Tsong

Molecular Sciences, School of (SMS)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The morphology and biaxial stress of amorphous boron films grown on silicon at 630°C have been determined in situ and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films in situ and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions.

Original language	English (US)
Pages (from-to)	891-894
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	3
DOIs	https://doi.org/10.1116/1.581661
State	Published - 1999

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition. / Nesting, David C.; Kouvetakis, John; Hearne, Sean et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 3, 1999, p. 891-894.

Research output: Contribution to journal › Article › peer-review

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AU - Tsong, I. S T

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Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

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