Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

David C. Nesting, John Kouvetakis, Sean Hearne, E. Chason, I. S T Tsong

Research output: Contribution to journalArticle

7 Scopus citations


The morphology and biaxial stress of amorphous boron films grown on silicon at 630°C have been determined in situ and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films in situ and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions.

Original languageEnglish (US)
Pages (from-to)891-894
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - Jan 1 1999


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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