Rashba effect in single-layer antimony telluroiodide SbTeI

Houlong L. Zhuang, Valentino R. Cooper, Haixuan Xu, P. Ganesh, Richard G. Hennig, P. R.C. Kent

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Exploring spin-orbit coupling (SOC) in single-layer materials is important for potential spintronics applications. Using first-principles calculations, we show that single-layer antimony telluroiodide SbTeI behaves as a two-dimensional semiconductor exhibiting a G0W0 band gap of 1.82 eV. More importantly, we observe the Rashba spin splitting in the SOC band structure of single-layer SbTeI with a sizable Rashba coupling parameter of 1.39 eVÅ, which is significantly larger than that of a number of two-dimensional systems including surfaces and interfaces. The low formation energy and real phonon modes of single-layer SbTeI imply that it is stable. Our study suggests that single-layer SbTeI is a candidate single-layer material for applications in spintronics devices.

Original languageEnglish (US)
Article number115302
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - Sep 4 2015
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Rashba effect in single-layer antimony telluroiodide SbTeI'. Together they form a unique fingerprint.

Cite this