24 Citations (Scopus)

Abstract

Random variations have been regarded as one of the major barriers on CMOS scaling. Compact models that physically capture these effects are crucial to bridge the process technology with design optimization. In this paper, 3-D atomistic simulations are performed to investigate fundamental variations in a scaled CMOS device, including random dopant fluctuation (RDF), line-edge roughness (LER), and oxide thickness fluctuation (OTF). By understanding the underlying physics and analyzing simulation results, compact models for random threshold (Vth) variations are developed. The models are scalable with device specifications, enabling quantitative analysis of circuit performance variability in future technology nodes. Using representative circuits, such as the inverter chain and SRAM cell, key insights are extracted on the trend of variability, as well as the implications on robust design.

Original languageEnglish (US)
Pages (from-to)108-113
Number of pages6
JournalJournal of Computational Electronics
Volume8
Issue number3-4
StatePublished - Dec 2009

Fingerprint

CMOS
Networks (circuits)
Modeling
Fluctuations
Atomistic Simulation
Robust Design
Static random access storage
Inverter
Quantitative Analysis
Roughness
Oxides
capture effect
3D
Physics
Surface roughness
Doping (additives)
Model
Scaling
Specification
Specifications

Keywords

  • Atomistic simulation
  • Inverter
  • Line-edge roughness
  • Oxide thickness fluctuation
  • Predictive modeling
  • Random dopant fluctuation
  • SRAM performance variability
  • Threshold variation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

Random variability modeling and its impact on scaled CMOS circuits. / Ye, Yun; Gummalla, Samatha; Wang, Chi Chao; Chakrabarti, Chaitali; Cao, Yu.

In: Journal of Computational Electronics, Vol. 8, No. 3-4, 12.2009, p. 108-113.

Research output: Contribution to journalArticle

Ye, Yun ; Gummalla, Samatha ; Wang, Chi Chao ; Chakrabarti, Chaitali ; Cao, Yu. / Random variability modeling and its impact on scaled CMOS circuits. In: Journal of Computational Electronics. 2009 ; Vol. 8, No. 3-4. pp. 108-113.
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