The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.
ASJC Scopus subject areas
- Condensed Matter Physics