Raman scattering from solid silicon at the melting temperature

R. J. Nemanich, D. K. Biegelsen, R. A. Street, L. E. Fennell

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Abstract

The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.

Original languageEnglish (US)
Pages (from-to)6005-6007
Number of pages3
JournalPhysical Review B
Volume29
Issue number10
DOIs
StatePublished - Jan 1 1984

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ASJC Scopus subject areas

  • Condensed Matter Physics

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