Raman scattering from solid silicon at the melting temperature

R. J. Nemanich; D. K. Biegelsen; R. A. Street; L. E. Fennell

doi:10.1103/PhysRevB.29.6005

Raman scattering from solid silicon at the melting temperature

R. J. Nemanich, D. K. Biegelsen, R. A. Street, L. E. Fennell

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28 Scopus citations

Abstract

The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.

Original language	English (US)
Pages (from-to)	6005-6007
Number of pages	3
Journal	Physical Review B
Volume	29
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.29.6005
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.29.6005

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@article{17e56d63eb8f4be0bc732efb8d70f459,

title = "Raman scattering from solid silicon at the melting temperature",

abstract = "The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.",

author = "Nemanich, {R. J.} and Biegelsen, {D. K.} and Street, {R. A.} and Fennell, {L. E.}",

year = "1984",

doi = "10.1103/PhysRevB.29.6005",

language = "English (US)",

volume = "29",

pages = "6005--6007",

journal = "Physical Review B",

issn = "0163-1829",

number = "10",

}

TY - JOUR

T1 - Raman scattering from solid silicon at the melting temperature

AU - Nemanich, R. J.

AU - Biegelsen, D. K.

AU - Street, R. A.

AU - Fennell, L. E.

PY - 1984

Y1 - 1984

N2 - The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.

AB - The Raman spectrum of solid silicon at the melting temperature has been obtained. A silicon film on a quartz substrate was radiantly heated with the use of 10.6- m radiation from a CO2 laser while the Raman scattering was excited by a pulsed Ar-ion laser. The results indicate that the silicon is crystalline. The anti-Stokes Stokes intensity ratio and the shift of the Raman peak are also determined.

UR - http://www.scopus.com/inward/record.url?scp=0013369576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013369576&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.29.6005

DO - 10.1103/PhysRevB.29.6005

M3 - Article

AN - SCOPUS:0013369576

SN - 0163-1829

VL - 29

SP - 6005

EP - 6007

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Raman scattering from solid silicon at the melting temperature

Abstract

ASJC Scopus subject areas

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