Radiation-induced gain degradation in lateral pnp b jts with lightly and heavily doped emitters

A. Wu, R. D. Schrimpf, Hugh Barnaby, D. M. Fleetwood, R. L. Pease, S. L. Rosier

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Abstract

Radiation-induced gain degradation is compared in two types of lateral PNP bipolar devices that are identical except for the emitter doping. The devices with heavily-doped emitters (1×1020 cm-3) degrade less than the devices with lightly-doped emitters (1×1018 cm-3). Both device types are sensitive to interface-trap formation in the oxide above the emitter-base junction and the neutral base region. In addition, the devices with lightly-doped emitters experience spreading of the depletion region into the emitter, increasing their sensitivity to total-dose irradiation. The gain degradation in both device types is due to a combination of increased base current and decreased collector current. The radiation-induced decrease in collector current is more significant for devices from this technology than for other devices studied previously. Increased gain degradation is observed in heavily-doped devices irradiated at low dose rates, but the enhanced degradation appears to be due to time-dependent effects rather than true dose-rate effects. The lightly-doped devices do not exhibit a clear dose-rate trend and the gain of these devices improves during post-irradiation annealing.

Original languageEnglish (US)
Pages (from-to)1914-1921
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume44
Issue number6 PART 1
Publication statusPublished - 1997
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Wu, A., Schrimpf, R. D., Barnaby, H., Fleetwood, D. M., Pease, R. L., & Rosier, S. L. (1997). Radiation-induced gain degradation in lateral pnp b jts with lightly and heavily doped emitters. IEEE Transactions on Nuclear Science, 44(6 PART 1), 1914-1921.