Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

Original languageEnglish (US)
Article number7470296
Pages (from-to)2145-2151
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number4
DOIs
StatePublished - Aug 1 2016

Fingerprint

radiation hardening
Radiation hardening
random access memory
Data storage equipment
cells
traveling ionospheric disturbances
resilience
dosage
space missions
radiation effects
Radiation effects
Dosimetry
radiation
Radiation
Networks (circuits)

Keywords

  • Chalcogenide glass
  • conductive bridging RAM (CBRAM)
  • nanoionics memory
  • non-volatile-memory (NVM)
  • programmable metallization cell (PMC)
  • radiation effects
  • radiation hardening by process
  • ReRAM
  • resistive switching
  • total ionizing dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Gonzalez Velo, Y., Mahmud, A., Chen, W., Taggart, J. L., Barnaby, H., Kozicki, M., ... Mitkova, M. (2016). Radiation hardening by process of CBRAM resistance switching cells. IEEE Transactions on Nuclear Science, 63(4), 2145-2151. [7470296]. https://doi.org/10.1109/TNS.2016.2569076

Radiation hardening by process of CBRAM resistance switching cells. / Gonzalez Velo, Yago; Mahmud, Adnan; Chen, Wenhao; Taggart, Jennifer Lynn; Barnaby, Hugh; Kozicki, Michael; Ailavajhala, Mahesh; Holbert, Keith; Mitkova, Maria.

In: IEEE Transactions on Nuclear Science, Vol. 63, No. 4, 7470296, 01.08.2016, p. 2145-2151.

Research output: Contribution to journalArticle

Gonzalez Velo, Y, Mahmud, A, Chen, W, Taggart, JL, Barnaby, H, Kozicki, M, Ailavajhala, M, Holbert, K & Mitkova, M 2016, 'Radiation hardening by process of CBRAM resistance switching cells', IEEE Transactions on Nuclear Science, vol. 63, no. 4, 7470296, pp. 2145-2151. https://doi.org/10.1109/TNS.2016.2569076
Gonzalez Velo, Yago ; Mahmud, Adnan ; Chen, Wenhao ; Taggart, Jennifer Lynn ; Barnaby, Hugh ; Kozicki, Michael ; Ailavajhala, Mahesh ; Holbert, Keith ; Mitkova, Maria. / Radiation hardening by process of CBRAM resistance switching cells. In: IEEE Transactions on Nuclear Science. 2016 ; Vol. 63, No. 4. pp. 2145-2151.
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