Radiation hardening by process of CBRAM resistance switching cells

Yago Gonzalez Velo; Adnan Mahmud; Wenhao Chen; Jennifer Lynn Taggart; Hugh Barnaby; Michael Kozicki; Mahesh Ailavajhala; Keith Holbert; Maria Mitkova

doi:10.1109/TNS.2016.2569076

Radiation hardening by process of CBRAM resistance switching cells

Yago Gonzalez Velo, Adnan Mahmud, Wenhao Chen, Jennifer Lynn Taggart, Hugh Barnaby, Michael Kozicki, Mahesh Ailavajhala, Keith Holbert, Maria Mitkova

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

Original language	English (US)
Article number	7470296
Pages (from-to)	2145-2151
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2016.2569076
State	Published - Aug 2016

Keywords

Chalcogenide glass
ReRAM
conductive bridging RAM (CBRAM)
nanoionics memory
non-volatile-memory (NVM)
programmable metallization cell (PMC)
radiation effects
radiation hardening by process
resistive switching
total ionizing dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2016.2569076

Cite this

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title = "Radiation hardening by process of CBRAM resistance switching cells",

abstract = "Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.",

keywords = "Chalcogenide glass, ReRAM, conductive bridging RAM (CBRAM), nanoionics memory, non-volatile-memory (NVM), programmable metallization cell (PMC), radiation effects, radiation hardening by process, resistive switching, total ionizing dose",

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year = "2016",

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AU - Gonzalez Velo, Yago

AU - Mahmud, Adnan

AU - Chen, Wenhao

AU - Taggart, Jennifer Lynn

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Ailavajhala, Mahesh

AU - Holbert, Keith

AU - Mitkova, Maria

PY - 2016/8

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KW - Chalcogenide glass

KW - ReRAM

KW - conductive bridging RAM (CBRAM)

KW - nanoionics memory

KW - non-volatile-memory (NVM)

KW - programmable metallization cell (PMC)

KW - radiation effects

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KW - total ionizing dose

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Radiation hardening by process of CBRAM resistance switching cells

Abstract

Keywords

ASJC Scopus subject areas

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