Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

Original languageEnglish (US)
Article number7470296
Pages (from-to)2145-2151
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number4
DOIs
StatePublished - Aug 1 2016

    Fingerprint

Keywords

  • Chalcogenide glass
  • conductive bridging RAM (CBRAM)
  • nanoionics memory
  • non-volatile-memory (NVM)
  • programmable metallization cell (PMC)
  • radiation effects
  • radiation hardening by process
  • ReRAM
  • resistive switching
  • total ionizing dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this