Radiation damage and the capture of Si interstitials by dopant atoms during implantation

Robert Culbertson, S. J. Pennycook

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Dopant-Si defect complexes in the surface layer amorphized by dopant ion implantation are identified. The complexes survive solid phase epitaxial regrowth conditions, but dissolve with additional heat treatment. The release of trapped interstitial Si atoms results in a transient enhanced diffusion of the dopant atoms into precipitates. It is shown that for Sb the source of Si interstitials is in the implanted region, while in the case of Ga any complexes formed during implantation do not survive regrowth. However, the deep edge of the radiation damaged region in the Ga case provides a source of interstitials leading to similar transient behavior. The effect of dopant species, implantation temperature, preamorphization, and post-implantation are discussed.

Original languageEnglish (US)
Pages (from-to)490-494
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume13
Issue number1-3
DOIs
StatePublished - Mar 1 1986
Externally publishedYes

Fingerprint

Radiation damage
radiation damage
Ion implantation
implantation
interstitials
Doping (additives)
Atoms
atoms
ion implantation
solid phases
precipitates
surface layers
heat treatment
Precipitates
Heat treatment
defects
radiation
Radiation
Defects
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Radiation damage and the capture of Si interstitials by dopant atoms during implantation. / Culbertson, Robert; Pennycook, S. J.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 13, No. 1-3, 01.03.1986, p. 490-494.

Research output: Contribution to journalArticle

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