Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Shinya Yamakawa, Stephen Goodnick, Shela Aboud, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections is carried out using a full-band Cellular Monte Carlo (CMC) method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure. In order to include quantum effects into the transport simulation, the effective potentials are used with a particle-based Monte Carlo simulator. This effective potential approach has been combined with the full-band CMC code for device simulation.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages53-54
Number of pages2
StatePublished - Dec 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamakawa, S., Goodnick, S., Aboud, S., & Saraniti, M. (2004). Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 53-54). (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts).