Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Shinya Yamakawa, Stephen Goodnick, Shela Aboud, Marco Saraniti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections is carried out using a full-band Cellular Monte Carlo (CMC) method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure. In order to include quantum effects into the transport simulation, the effective potentials are used with a particle-based Monte Carlo simulator. This effective potential approach has been combined with the full-band CMC code for device simulation.

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages53-54
Number of pages2
StatePublished - 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

Fingerprint

High electron mobility transistors
Electron-phonon interactions
Monte Carlo methods
Crystal structure
Simulators
Monte Carlo simulation
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamakawa, S., Goodnick, S., Aboud, S., & Saraniti, M. (2004). Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 53-54)

Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. / Yamakawa, Shinya; Goodnick, Stephen; Aboud, Shela; Saraniti, Marco.

2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. p. 53-54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamakawa, S, Goodnick, S, Aboud, S & Saraniti, M 2004, Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. in 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. pp. 53-54, 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts, West Lafayette, IN, United States, 10/24/04.
Yamakawa S, Goodnick S, Aboud S, Saraniti M. Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. p. 53-54
Yamakawa, Shinya ; Goodnick, Stephen ; Aboud, Shela ; Saraniti, Marco. / Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs. 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. pp. 53-54
@inproceedings{edfa677b1b504c3da13d038d3d047e7a,
title = "Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs",
abstract = "The simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections is carried out using a full-band Cellular Monte Carlo (CMC) method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure. In order to include quantum effects into the transport simulation, the effective potentials are used with a particle-based Monte Carlo simulator. This effective potential approach has been combined with the full-band CMC code for device simulation.",
author = "Shinya Yamakawa and Stephen Goodnick and Shela Aboud and Marco Saraniti",
year = "2004",
language = "English (US)",
isbn = "0780386493",
pages = "53--54",
booktitle = "2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts",

}

TY - GEN

T1 - Quantum corrected full-band Cellular Monte Carlo simulation of AlGaN/GaN HEMTs

AU - Yamakawa, Shinya

AU - Goodnick, Stephen

AU - Aboud, Shela

AU - Saraniti, Marco

PY - 2004

Y1 - 2004

N2 - The simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections is carried out using a full-band Cellular Monte Carlo (CMC) method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure. In order to include quantum effects into the transport simulation, the effective potentials are used with a particle-based Monte Carlo simulator. This effective potential approach has been combined with the full-band CMC code for device simulation.

AB - The simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections is carried out using a full-band Cellular Monte Carlo (CMC) method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure. In order to include quantum effects into the transport simulation, the effective potentials are used with a particle-based Monte Carlo simulator. This effective potential approach has been combined with the full-band CMC code for device simulation.

UR - http://www.scopus.com/inward/record.url?scp=21844468278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844468278&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:21844468278

SN - 0780386493

SP - 53

EP - 54

BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

ER -