Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

Hongbin Yu, C. S. Jiang, X. D. Wang, Qian Niu, C. K. Shih, Ph Ebert, J. M. White, J. M. White, C. K. Shih, J. M. White, Qian Niu, C. K. Shih, Zhenyu Zhang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

Original languageEnglish (US)
Pages (from-to)4
Number of pages1
JournalPhysical Review Letters
Volume88
Issue number1
DOIs
StatePublished - 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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