Quantitative analysis of one-dimensional dopant profile by electron holography

Martha McCartney, M. A. Gribelyuk, Jing Li, P. Ronsheim, J. S. McMurray, David Smith

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Abstract

The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.

Original languageEnglish (US)
Pages (from-to)3213-3215
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number17
DOIs
StatePublished - Apr 29 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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