Quantitative analysis of one-dimensional dopant profile by electron holography

Martha McCartney, M. A. Gribelyuk, Jing Li, P. Ronsheim, J. S. McMurray, David Smith

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.

Original languageEnglish (US)
Pages (from-to)3213-3215
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number17
DOIs
StatePublished - Apr 29 2002

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holography
quantitative analysis
electron microscopes
profiles
p-n junctions
wedges
charging
surface layers
ions
electrons
mass spectroscopy
spatial resolution
coatings
carbon
sensitivity
electric potential
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantitative analysis of one-dimensional dopant profile by electron holography. / McCartney, Martha; Gribelyuk, M. A.; Li, Jing; Ronsheim, P.; McMurray, J. S.; Smith, David.

In: Applied Physics Letters, Vol. 80, No. 17, 29.04.2002, p. 3213-3215.

Research output: Contribution to journalArticle

McCartney, Martha ; Gribelyuk, M. A. ; Li, Jing ; Ronsheim, P. ; McMurray, J. S. ; Smith, David. / Quantitative analysis of one-dimensional dopant profile by electron holography. In: Applied Physics Letters. 2002 ; Vol. 80, No. 17. pp. 3213-3215.
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