Quantitative analysis of one-dimensional dopant profile by electron holography

Martha McCartney; M. A. Gribelyuk; Jing Li; P. Ronsheim; J. S. McMurray; David Smith

doi:10.1063/1.1473702

Quantitative analysis of one-dimensional dopant profile by electron holography

Martha McCartney, M. A. Gribelyuk, Jing Li, P. Ronsheim, J. S. McMurray, David Smith

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.

Original language	English (US)
Pages (from-to)	3213-3215
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	17
DOIs	https://doi.org/10.1063/1.1473702
State	Published - Apr 29 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1473702

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abstract = "The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.",

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AU - McCartney, Martha

AU - Gribelyuk, M. A.

AU - Li, Jing

AU - Ronsheim, P.

AU - McMurray, J. S.

AU - Smith, David

PY - 2002/4/29

Y1 - 2002/4/29

N2 - The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.

AB - The one-dimensional dopant profile of a silicon p-n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen.

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Quantitative analysis of one-dimensional dopant profile by electron holography

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