Abstract
This paper describes programmable metallization cell (PMC) technology, which utilizes a high resistance ion conducting materials between oxidizable and inert electrodes. These cells exhibit resistance switching which is based on the combination of bias dependent ion transport through the solid-state ion conductor and reduction/oxidation (redox) reactions occurring at the electrodes. PMC structures promise a wide range of applications and PMC-based resistive random access memory (ReRAM) has already entered the nonvolatile memory marketplace. The paper briefly reviews PMC device operation and discusses research findings on memory cells that utilize Ag-Ge-S ion conducting films for commercial memory and radiation-hard applications.
Original language | English (US) |
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Title of host publication | ECS Transactions |
Publisher | Electrochemical Society Inc. |
Pages | 47-52 |
Number of pages | 6 |
Volume | 58 |
Edition | 5 |
DOIs | |
State | Published - 2013 |
ASJC Scopus subject areas
- Engineering(all)