Abstract

This paper describes programmable metallization cell (PMC) technology, which utilizes a high resistance ion conducting materials between oxidizable and inert electrodes. These cells exhibit resistance switching which is based on the combination of bias dependent ion transport through the solid-state ion conductor and reduction/oxidation (redox) reactions occurring at the electrodes. PMC structures promise a wide range of applications and PMC-based resistive random access memory (ReRAM) has already entered the nonvolatile memory marketplace. The paper briefly reviews PMC device operation and discusses research findings on memory cells that utilize Ag-Ge-S ion conducting films for commercial memory and radiation-hard applications.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages47-52
Number of pages6
Volume58
Edition5
DOIs
StatePublished - 2013

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kozicki, M., Dandamudi, P., Barnaby, H., & Gonzalez Velo, Y. (2013). Programmable metallization cells in memory and switching applications. In ECS Transactions (5 ed., Vol. 58, pp. 47-52). Electrochemical Society Inc.. https://doi.org/10.1149/05805.0047ecst