TY - JOUR
T1 - Pressure Dependence of III-V Schottky Barriers
T2 - A Critical Test of Theories for Fermi Level Pinning
AU - Van Schilfgaarde, Mark
AU - Weber, E. R.
AU - Newman, N.
PY - 1994
Y1 - 1994
N2 - The pressure-induced changes in the Schottky barrier height of Pt/GaAs and Au/GaAs are studied with ab initio electronic structure calculations. We show that the pressure dependence of the Schottky barrier offers a critical test of competing models of Schottky barrier pinning. We find that the pressure dependence of Pt/GaAs Schottky barriers with As antisite defects near the interface agrees well with experiment, and that the agreement closely tracks both the measured and calculated pressure dependence of the bulk As antisite. In contrast, poor agreement is found for ideal interfaces in which defects are not included.
AB - The pressure-induced changes in the Schottky barrier height of Pt/GaAs and Au/GaAs are studied with ab initio electronic structure calculations. We show that the pressure dependence of the Schottky barrier offers a critical test of competing models of Schottky barrier pinning. We find that the pressure dependence of Pt/GaAs Schottky barriers with As antisite defects near the interface agrees well with experiment, and that the agreement closely tracks both the measured and calculated pressure dependence of the bulk As antisite. In contrast, poor agreement is found for ideal interfaces in which defects are not included.
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U2 - 10.1103/PhysRevLett.73.581
DO - 10.1103/PhysRevLett.73.581
M3 - Article
AN - SCOPUS:0028466608
SN - 0031-9007
VL - 73
SP - 581
EP - 584
JO - Physical Review Letters
JF - Physical Review Letters
IS - 4
ER -