Preparation of AlGaN-based high electron mobility transistor devices using focused ion beam milling

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1030-1031
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	14
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927608082780
State	Published - Aug 2008

ASJC Scopus subject areas

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title = "Preparation of AlGaN-based high electron mobility transistor devices using focused ion beam milling",

author = "Cullen, {D. A.} and David Smith",

year = "2008",

month = aug,

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language = "English (US)",

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pages = "1030--1031",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

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AU - Smith, David

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