Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications

Muhammad Ruhul Hasin, Jennifer Kitchen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.

Original languageEnglish (US)
Title of host publicationProceedings - 2016 IEEE 34th VLSI Test Symposium, VTS 2016
PublisherIEEE Computer Society
Volume2016-May
ISBN (Electronic)9781467384544
DOIs
StatePublished - May 23 2016
Event34th IEEE VLSI Test Symposium, VTS 2016 - Las Vegas, United States
Duration: Apr 25 2016Apr 27 2016

Other

Other34th IEEE VLSI Test Symposium, VTS 2016
CountryUnited States
CityLas Vegas
Period4/25/164/27/16

Keywords

  • GaN
  • Power Amplifier
  • Production Tuning
  • RF

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

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  • Cite this

    Hasin, M. R., & Kitchen, J. (2016). Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications. In Proceedings - 2016 IEEE 34th VLSI Test Symposium, VTS 2016 (Vol. 2016-May). [7477275] IEEE Computer Society. https://doi.org/10.1109/VTS.2016.7477275