Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications

Muhammad Ruhul Hasin; Jennifer Kitchen

doi:10.1109/VTS.2016.7477275

Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.

Original language	English (US)
Title of host publication	Proceedings - 2016 IEEE 34th VLSI Test Symposium, VTS 2016
Publisher	IEEE Computer Society
Volume	2016-May
ISBN (Electronic)	9781467384544
DOIs	https://doi.org/10.1109/VTS.2016.7477275
State	Published - May 23 2016
Event	34th IEEE VLSI Test Symposium, VTS 2016 - Las Vegas, United States Duration: Apr 25 2016 → Apr 27 2016

Other

Other	34th IEEE VLSI Test Symposium, VTS 2016
Country/Territory	United States
City	Las Vegas
Period	4/25/16 → 4/27/16

Keywords

GaN
Power Amplifier
Production Tuning
RF

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications

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10.1109/VTS.2016.7477275

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@inproceedings{965f4099012b463a9d5fff11ee98ee18,

title = "Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications",

abstract = "The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.",

keywords = "GaN, Power Amplifier, Production Tuning, RF",

author = "Hasin, {Muhammad Ruhul} and Jennifer Kitchen",

year = "2016",

month = may,

day = "23",

doi = "10.1109/VTS.2016.7477275",

language = "English (US)",

volume = "2016-May",

booktitle = "Proceedings - 2016 IEEE 34th VLSI Test Symposium, VTS 2016",

publisher = "IEEE Computer Society",

address = "United States",

note = "34th IEEE VLSI Test Symposium, VTS 2016 ; Conference date: 25-04-2016 Through 27-04-2016",

}

TY - GEN

T1 - Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications

AU - Hasin, Muhammad Ruhul

AU - Kitchen, Jennifer

PY - 2016/5/23

Y1 - 2016/5/23

N2 - The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.

AB - The RF Power Amplifier (PA) is usually the bottleneck in designing high efficiency, high linearity wireless transceivers within any given power specification. Pico-cell basestation PAs deliver power in the range of 10 Watts, with aggressive gain and efficiency requirements for next generation cellular networks. The slightest variations in PA biasing or the input and output load networks can cause significant degradation in RF PA performance. This work discusses the impact of process variation and variability in input/output networks on RF performance, and suggests ways to regain various performance parameters through post fabrication tuning of the PA.

KW - GaN

KW - Power Amplifier

KW - Production Tuning

KW - RF

UR - http://www.scopus.com/inward/record.url?scp=84973925413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84973925413&partnerID=8YFLogxK

U2 - 10.1109/VTS.2016.7477275

DO - 10.1109/VTS.2016.7477275

M3 - Conference contribution

AN - SCOPUS:84973925413

VL - 2016-May

BT - Proceedings - 2016 IEEE 34th VLSI Test Symposium, VTS 2016

PB - IEEE Computer Society

T2 - 34th IEEE VLSI Test Symposium, VTS 2016

Y2 - 25 April 2016 through 27 April 2016

ER -

Post fabrication tuning of GaN based RF power amplifiers for pico-cell applications

Abstract

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Keywords

ASJC Scopus subject areas

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