Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

S. Srinivasan, M. Stevens, Fernando Ponce, T. Mukai

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We have studied the properties of InGaNGaN quantum wells grown on epitaxially laterally overgrown GaN stripes. The stripes have a triangular cross section due to {11 2- 2} crystalline facets. We have observed that the integrated light emission from such structures is uniformly polychromatic over a wide range of the visible spectrum. Using cathodoluminescence techniques, we find that the local emission wavelength increases steadily along the facets, in the direction away from the substrate. The gradient in the emission wavelength is related to the dependence of the quantum well width on the relative position along the facet. The continuous variation of the quantum well properties causes a uniform, polychromatic luminescence band. For some conditions, such distribution can resemble solar-white light emission. This approach can be used to produce an integrated white light source for monolithically integrated white light-emitting diodes.

Original languageEnglish (US)
Article number131911
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number13
DOIs
StatePublished - Sep 26 2005

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light emission
flat surfaces
quantum wells
cathodoluminescence
visible spectrum
wavelengths
light sources
light emitting diodes
luminescence
gradients
causes
cross sections

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets. / Srinivasan, S.; Stevens, M.; Ponce, Fernando; Mukai, T.

In: Applied Physics Letters, Vol. 87, No. 13, 131911, 26.09.2005, p. 1-3.

Research output: Contribution to journalArticle

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