Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

Luying Li; Lei Jin; Jianbo Wang; David Smith; Wan Jian Yin; Yanfa Yan; Hongqian Sang; Wallace C H Choy; Martha McCartney

doi:10.1002/adma.201103920

Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

Luying Li, Lei Jin, Jianbo Wang, David Smith, Wan Jian Yin, Yanfa Yan, Hongqian Sang, Wallace C H Choy, Martha McCartney

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

Original language	English (US)
Pages (from-to)	1328-1332
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	10
DOIs	https://doi.org/10.1002/adma.201103920
State	Published - Mar 8 2012

Keywords

ZnSe
electron holography
nanocrystals
semiconductors
structure-property relationships

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201103920

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abstract = "Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.",

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T1 - Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

AU - Li, Luying

AU - Jin, Lei

AU - Wang, Jianbo

AU - Smith, David

AU - Yin, Wan Jian

AU - Yan, Yanfa

AU - Sang, Hongqian

AU - Choy, Wallace C H

AU - McCartney, Martha

PY - 2012/3/8

Y1 - 2012/3/8

N2 - Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

AB - Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

KW - ZnSe

KW - electron holography

KW - nanocrystals

KW - semiconductors

KW - structure-property relationships

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Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

Abstract

Keywords

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