Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts

Luying Li, Lei Jin, Jianbo Wang, David Smith, Wan Jian Yin, Yanfa Yan, Hongqian Sang, Wallace C H Choy, Martha McCartney

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.

Original languageEnglish (US)
Pages (from-to)1328-1332
Number of pages5
JournalAdvanced Materials
Volume24
Issue number10
DOIs
StatePublished - Mar 8 2012

Fingerprint

Nanobelts
Charge distribution
Polarization
Nanostructures
Semiconductor materials

Keywords

  • electron holography
  • nanocrystals
  • semiconductors
  • structure-property relationships
  • ZnSe

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts. / Li, Luying; Jin, Lei; Wang, Jianbo; Smith, David; Yin, Wan Jian; Yan, Yanfa; Sang, Hongqian; Choy, Wallace C H; McCartney, Martha.

In: Advanced Materials, Vol. 24, No. 10, 08.03.2012, p. 1328-1332.

Research output: Contribution to journalArticle

Li, Luying ; Jin, Lei ; Wang, Jianbo ; Smith, David ; Yin, Wan Jian ; Yan, Yanfa ; Sang, Hongqian ; Choy, Wallace C H ; McCartney, Martha. / Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe nanobelts. In: Advanced Materials. 2012 ; Vol. 24, No. 10. pp. 1328-1332.
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