Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

P. G. Caldas, E. M. Silva, R. Prioli, J. Y. Huang, R. Juday, A. M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩, followed by the basal {0002}⟨112¯0⟩. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩ slip systems were observed at an average shear stress of 11 GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the ⟨112¯0⟩ directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along ⟨112¯0⟩ directions were associated with the {0002}⟨112¯0⟩ slip.

Original languageEnglish (US)
Article number125105
JournalJournal of Applied Physics
Volume121
Issue number12
DOIs
StatePublished - Mar 28 2017

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nanoindentation
plastic properties
stress distribution
slip
optical properties
piles
cathodoluminescence
tensile stress
indentation
shear stress
curvature
transmission electron microscopy
microstructure
radii
cross sections
defects
symmetry
thin films
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Caldas, P. G., Silva, E. M., Prioli, R., Huang, J. Y., Juday, R., Fischer, A. M., & Ponce, F. (2017). Plasticity and optical properties of GaN under highly localized nanoindentation stress fields. Journal of Applied Physics, 121(12), [125105]. https://doi.org/10.1063/1.4978018

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields. / Caldas, P. G.; Silva, E. M.; Prioli, R.; Huang, J. Y.; Juday, R.; Fischer, A. M.; Ponce, Fernando.

In: Journal of Applied Physics, Vol. 121, No. 12, 125105, 28.03.2017.

Research output: Contribution to journalArticle

Caldas, P. G. ; Silva, E. M. ; Prioli, R. ; Huang, J. Y. ; Juday, R. ; Fischer, A. M. ; Ponce, Fernando. / Plasticity and optical properties of GaN under highly localized nanoindentation stress fields. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 12.
@article{70b4b6b9c81249f8876a757d18e4d5a2,
title = "Plasticity and optical properties of GaN under highly localized nanoindentation stress fields",
abstract = "Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩, followed by the basal {0002}⟨112¯0⟩. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩ slip systems were observed at an average shear stress of 11 GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the ⟨112¯0⟩ directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along ⟨112¯0⟩ directions were associated with the {0002}⟨112¯0⟩ slip.",
author = "Caldas, {P. G.} and Silva, {E. M.} and R. Prioli and Huang, {J. Y.} and R. Juday and Fischer, {A. M.} and Fernando Ponce",
year = "2017",
month = "3",
day = "28",
doi = "10.1063/1.4978018",
language = "English (US)",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

AU - Caldas, P. G.

AU - Silva, E. M.

AU - Prioli, R.

AU - Huang, J. Y.

AU - Juday, R.

AU - Fischer, A. M.

AU - Ponce, Fernando

PY - 2017/3/28

Y1 - 2017/3/28

N2 - Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩, followed by the basal {0002}⟨112¯0⟩. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩ slip systems were observed at an average shear stress of 11 GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the ⟨112¯0⟩ directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along ⟨112¯0⟩ directions were associated with the {0002}⟨112¯0⟩ slip.

AB - Nanoscale plasticity has been studied on (0001) GaN thin films, using tips with very small radius of curvature. Cross-section transmission electron microscopy images of the nanoindentations indicate that the primary slip systems are the pyramidal {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩, followed by the basal {0002}⟨112¯0⟩. Incipient plasticity was observed to be initiated by metastable atomic-scale slip events that occur as the crystal conforms to the shape of the tip. Large volumetric material displacements along the {11¯01}⟨112¯3⟩ and {112¯2}⟨112¯3⟩ slip systems were observed at an average shear stress of 11 GPa. Hexagonal shaped nanoindentation impressions following the symmetry of GaN were observed, with material pile-up in the ⟨112¯0⟩ directions. Spatially resolved cathodoluminescence images were used to correlate the microstructure with the optical properties. A large number of non-radiative defects were observed directly below the indentation. Regions under tensile stress extending from the nanoindentation along ⟨112¯0⟩ directions were associated with the {0002}⟨112¯0⟩ slip.

UR - http://www.scopus.com/inward/record.url?scp=85016308753&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016308753&partnerID=8YFLogxK

U2 - 10.1063/1.4978018

DO - 10.1063/1.4978018

M3 - Article

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 125105

ER -