Plastic hardening in cubic semiconductors by nanoscratching

P. G. Caldas; R. Prioli; C. M. Almeida; J. Y. Huang; Fernando Ponce

doi:10.1063/1.3517459

Plastic hardening in cubic semiconductors by nanoscratching

P. G. Caldas, R. Prioli, C. M. Almeida, J. Y. Huang, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along {110} and {100} crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes.

Original language	English (US)
Article number	013502
Journal	Journal of Applied Physics
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.3517459
State	Published - Jan 1 2011

ASJC Scopus subject areas

General Physics and Astronomy

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@article{b26a528334b74be1aa64df6f43fb0b4f,

title = "Plastic hardening in cubic semiconductors by nanoscratching",

abstract = "The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along {110} and {100} crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes.",

author = "Caldas, {P. G.} and R. Prioli and Almeida, {C. M.} and Huang, {J. Y.} and Fernando Ponce",

note = "Funding Information: This work was partially supported by the Brazilian Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico (CNPq) and the Funda{\c c}{\~a}o Carlos Chagas Filho de Amparo {\`a} Pesquisa do Estado do Rio de Janeiro (FAPERJ). Research at Arizona State University was supported by a gift from Nichia Corporation.",

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doi = "10.1063/1.3517459",

language = "English (US)",

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journal = "Journal of Applied Physics",

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T1 - Plastic hardening in cubic semiconductors by nanoscratching

AU - Caldas, P. G.

AU - Prioli, R.

AU - Almeida, C. M.

AU - Huang, J. Y.

AU - Ponce, Fernando

N1 - Funding Information: This work was partially supported by the Brazilian Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) and the Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ). Research at Arizona State University was supported by a gift from Nichia Corporation.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along {110} and {100} crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes.

AB - The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along {110} and {100} crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 013502

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Plastic hardening in cubic semiconductors by nanoscratching

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