Picosecond Raman studies of field-induced transient hole transport in an Al
            0.3Ga
            0.7As-based p-i-n nanostructure

Y. Chen; Kong-Thon Tsen; O. F. Sankey; D. K. Ferry

doi:10.1117/12.470428

Picosecond Raman studies of field-induced transient hole transport in an Al _0.3Ga _0.7As-based p-i-n nanostructure

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electric field-induced transient hole transport in an Al _0.3Ga _0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300K. Our experimental results demonstrate that at T = 300K, for a 5-ps excitation laser pulse and a hole density of n _h ≅ 5×10 ¹⁷ cm ^-3, transient hole drift velocity increases from zero to ≅ (3 ± 0.7)×10 ⁶ cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅ (8 ± 0.8)×10 ⁶ cm/sec for the applied electric field intensity of E ≥ 25 kV/cm and up to 65 kV/cm.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, J.-J. Song
Pages	240-249
Number of pages	10
Volume	4643
DOIs	https://doi.org/10.1117/12.470428
State	Published - 2002
Event	Ultrafast Phenomena in Semiconductors VI - San Jose, CA, United States Duration: Jan 21 2002 → Jan 25 2002

Other

Other	Ultrafast Phenomena in Semiconductors VI
Country/Territory	United States
City	San Jose, CA
Period	1/21/02 → 1/25/02

Keywords

AlGaAs
Hole transport
Raman spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.470428

Cite this

Chen, Y., Tsen, K.-T., Sankey, O. F., & Ferry, D. K. (2002). Picosecond Raman studies of field-induced transient hole transport in an Al _0.3Ga _0.7As-based p-i-n nanostructure In K. T. Tsen, & J.-J. Song (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4643, pp. 240-249) https://doi.org/10.1117/12.470428

Picosecond Raman studies of field-induced transient hole transport in an Al _0.3Ga _0.7As-based p-i-n nanostructure . / Chen, Y.; Tsen, Kong-Thon; Sankey, O. F. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; J.-J. Song. Vol. 4643 2002. p. 240-249.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, Y, Tsen, K-T, Sankey, OF & Ferry, DK 2002, Picosecond Raman studies of field-induced transient hole transport in an Al _0.3Ga _0.7As-based p-i-n nanostructure in KT Tsen & J-J Song (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4643, pp. 240-249, Ultrafast Phenomena in Semiconductors VI, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.470428

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title = "Picosecond Raman studies of field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure ",

abstract = "Electric field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300K. Our experimental results demonstrate that at T = 300K, for a 5-ps excitation laser pulse and a hole density of n h ≅ 5×10 17 cm -3, transient hole drift velocity increases from zero to ≅ (3 ± 0.7)×10 6 cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅ (8 ± 0.8)×10 6 cm/sec for the applied electric field intensity of E ≥ 25 kV/cm and up to 65 kV/cm. ",

keywords = "AlGaAs, Hole transport, Raman spectroscopy",

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N2 - Electric field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300K. Our experimental results demonstrate that at T = 300K, for a 5-ps excitation laser pulse and a hole density of n h ≅ 5×10 17 cm -3, transient hole drift velocity increases from zero to ≅ (3 ± 0.7)×10 6 cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅ (8 ± 0.8)×10 6 cm/sec for the applied electric field intensity of E ≥ 25 kV/cm and up to 65 kV/cm.

AB - Electric field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300K. Our experimental results demonstrate that at T = 300K, for a 5-ps excitation laser pulse and a hole density of n h ≅ 5×10 17 cm -3, transient hole drift velocity increases from zero to ≅ (3 ± 0.7)×10 6 cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅ (8 ± 0.8)×10 6 cm/sec for the applied electric field intensity of E ≥ 25 kV/cm and up to 65 kV/cm.

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