Picosecond Raman studies of field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electric field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300K. Our experimental results demonstrate that at T = 300K, for a 5-ps excitation laser pulse and a hole density of n h ≅ 5×10 17 cm -3, transient hole drift velocity increases from zero to ≅ (3 ± 0.7)×10 6 cm/sec when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅ (8 ± 0.8)×10 6 cm/sec for the applied electric field intensity of E ≥ 25 kV/cm and up to 65 kV/cm.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, J.-J. Song
Pages240-249
Number of pages10
Volume4643
DOIs
StatePublished - 2002
EventUltrafast Phenomena in Semiconductors VI - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Other

OtherUltrafast Phenomena in Semiconductors VI
CountryUnited States
CitySan Jose, CA
Period1/21/021/25/02

Keywords

  • AlGaAs
  • Hole transport
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Chen, Y., Tsen, K-T., Sankey, O. F., & Ferry, D. K. (2002). Picosecond Raman studies of field-induced transient hole transport in an Al 0.3Ga 0.7As-based p-i-n nanostructure In K. T. Tsen, & J-J. Song (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4643, pp. 240-249) https://doi.org/10.1117/12.470428