Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann; S. J. Sheih; C. Chia; Kong-Thon Tsen; O. F. Sankey; Selim E. Guncer; D. K. Ferry; G. Maracas; Ravi Droopad; A. Salvador; A. Botcharev; H. Morkoç

doi:10.1063/1.110848

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, C. Chia, Kong-Thon Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×10¹⁸ cm^-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V _d=2.5×10⁷ cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	1230-1232
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	10
DOIs	https://doi.org/10.1063/1.110848
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.110848

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K.-T., Sankey, O. F., Guncer, S. E., Ferry, D. K., Maracas, G., Droopad, R., Salvador, A., Botcharev, A., & Morkoç, H. (1994). Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. Applied Physics Letters, 64(10), 1230-1232. https://doi.org/10.1063/1.110848

Grann, ED, Sheih, SJ, Chia, C, Tsen, K-T, Sankey, OF, Guncer, SE, Ferry, DK, Maracas, G, Droopad, R, Salvador, A, Botcharev, A & Morkoç, H 1994, 'Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors', Applied Physics Letters, vol. 64, no. 10, pp. 1230-1232. https://doi.org/10.1063/1.110848

@article{e8c7d3f18eec4a51bb2cf093f12c5c67,

title = "Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors",

abstract = "Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",

author = "Grann, {E. D.} and Sheih, {S. J.} and C. Chia and Kong-Thon Tsen and Sankey, {O. F.} and Guncer, {Selim E.} and Ferry, {D. K.} and G. Maracas and Ravi Droopad and A. Salvador and A. Botcharev and H. Morko{\c c}",

year = "1994",

doi = "10.1063/1.110848",

language = "English (US)",

volume = "64",

pages = "1230--1232",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

AU - Grann, E. D.

AU - Sheih, S. J.

AU - Chia, C.

AU - Tsen, Kong-Thon

AU - Sankey, O. F.

AU - Guncer, Selim E.

AU - Ferry, D. K.

AU - Maracas, G.

AU - Droopad, Ravi

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoç, H.

PY - 1994

Y1 - 1994

N2 - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

AB - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

UR - http://www.scopus.com/inward/record.url?scp=0000475407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000475407&partnerID=8YFLogxK

U2 - 10.1063/1.110848

DO - 10.1063/1.110848

M3 - Article

AN - SCOPUS:0000475407

SN - 0003-6951

VL - 64

SP - 1230

EP - 1232

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this