Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)