Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, C. Chia, Kong-Thon Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

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Abstract

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1230-1232
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number10
DOIs
StatePublished - Dec 1 1994

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K-T., Sankey, O. F., Guncer, S. E., Ferry, D. K., Maracas, G., Droopad, R., Salvador, A., Botcharev, A., & Morkoç, H. (1994). Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. Applied Physics Letters, 64(10), 1230-1232. https://doi.org/10.1063/1.110848