Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, C. Chia, Kong-Thon Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

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Abstract

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1230-1232
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number10
DOIs
StatePublished - 1994

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electric fields
electrons
Raman spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. / Grann, E. D.; Sheih, S. J.; Chia, C.; Tsen, Kong-Thon; Sankey, O. F.; Guncer, Selim E.; Ferry, D. K.; Maracas, G.; Droopad, Ravi; Salvador, A.; Botcharev, A.; Morkoç, H.

In: Applied Physics Letters, Vol. 64, No. 10, 1994, p. 1230-1232.

Research output: Contribution to journalArticle

Grann, ED, Sheih, SJ, Chia, C, Tsen, K-T, Sankey, OF, Guncer, SE, Ferry, DK, Maracas, G, Droopad, R, Salvador, A, Botcharev, A & Morkoç, H 1994, 'Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors', Applied Physics Letters, vol. 64, no. 10, pp. 1230-1232. https://doi.org/10.1063/1.110848
Grann, E. D. ; Sheih, S. J. ; Chia, C. ; Tsen, Kong-Thon ; Sankey, O. F. ; Guncer, Selim E. ; Ferry, D. K. ; Maracas, G. ; Droopad, Ravi ; Salvador, A. ; Botcharev, A. ; Morkoç, H. / Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. In: Applied Physics Letters. 1994 ; Vol. 64, No. 10. pp. 1230-1232.
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