Picosecond Raman scattering studies of carrier dynamics in In xGa1-xAs1-yNy

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Abstract

Picosecond Raman spectroscopy has been used to study non-equilibrium electron distributions and energy loss rate in a metal-organic-chemical-vapour- deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer grown on GaAs substrate. It is demonstrated that for the photoexcited electronhole pair density of n ≃ 1018 cm-3 electron distributions can be described very well by Fermi-Dirac distributions with effective electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of the excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be about 64 meV ps-1. These experimental results are compared with those of GaAs and important implications are given.

Original languageEnglish (US)
Pages (from-to)S3333-S3343
JournalJournal of Physics Condensed Matter
Volume16
Issue number31
DOIs
StatePublished - Aug 11 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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