Physical properties of electrochemically deposited cadmium mercury telluride films

M. Neumann-Spallart; G. Tamizhmani; A. Boutry-Forveille; C. Levy-Clement

doi:10.1016/0040-6090(89)90714-1

Physical properties of electrochemically deposited cadmium mercury telluride films

M. Neumann-Spallart, G. Tamizhmani, A. Boutry-Forveille, C. Levy-Clement

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Films of cadmium-rich cadmium mercury telluride (Cd_xHg_1-xTe, CMT) 0.1-2 μm thick were formed on conducting glass (SnO₂) by electrochemical (potentiostatic) deposition from an aqueous bath. 1-x ranged from 0 to 0.25. Dependingon the mercury content, a preferential orientation of the films was detected by X-ray diffraction studies. The homogeneous composition of the layers was confirmed by electron microprobe and secondary ion mass spectrometry measurements. The optical properties are in accordance with a semiconductor of variable band gap, 1< E_g <1.5 eV, for 0.25 > 1-x > 0. CMT layers of n- and p-type were obtained by appropriate choices of deposition potential and annealing conditions, as shown by the photovoltaic effect of CMT/Au junctions.

Original language	English (US)
Pages (from-to)	315-322
Number of pages	8
Journal	Thin Solid Films
Volume	169
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(89)90714-1
State	Published - Feb 15 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(89)90714-1

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title = "Physical properties of electrochemically deposited cadmium mercury telluride films",

abstract = "Films of cadmium-rich cadmium mercury telluride (CdxHg1-xTe, CMT) 0.1-2 μm thick were formed on conducting glass (SnO2) by electrochemical (potentiostatic) deposition from an aqueous bath. 1-x ranged from 0 to 0.25. Dependingon the mercury content, a preferential orientation of the films was detected by X-ray diffraction studies. The homogeneous composition of the layers was confirmed by electron microprobe and secondary ion mass spectrometry measurements. The optical properties are in accordance with a semiconductor of variable band gap, 1< Eg <1.5 eV, for 0.25 > 1-x > 0. CMT layers of n- and p-type were obtained by appropriate choices of deposition potential and annealing conditions, as shown by the photovoltaic effect of CMT/Au junctions.",

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T1 - Physical properties of electrochemically deposited cadmium mercury telluride films

AU - Neumann-Spallart, M.

AU - Tamizhmani, G.

AU - Boutry-Forveille, A.

AU - Levy-Clement, C.

PY - 1989/2/15

Y1 - 1989/2/15

N2 - Films of cadmium-rich cadmium mercury telluride (CdxHg1-xTe, CMT) 0.1-2 μm thick were formed on conducting glass (SnO2) by electrochemical (potentiostatic) deposition from an aqueous bath. 1-x ranged from 0 to 0.25. Dependingon the mercury content, a preferential orientation of the films was detected by X-ray diffraction studies. The homogeneous composition of the layers was confirmed by electron microprobe and secondary ion mass spectrometry measurements. The optical properties are in accordance with a semiconductor of variable band gap, 1< Eg <1.5 eV, for 0.25 > 1-x > 0. CMT layers of n- and p-type were obtained by appropriate choices of deposition potential and annealing conditions, as shown by the photovoltaic effect of CMT/Au junctions.

AB - Films of cadmium-rich cadmium mercury telluride (CdxHg1-xTe, CMT) 0.1-2 μm thick were formed on conducting glass (SnO2) by electrochemical (potentiostatic) deposition from an aqueous bath. 1-x ranged from 0 to 0.25. Dependingon the mercury content, a preferential orientation of the films was detected by X-ray diffraction studies. The homogeneous composition of the layers was confirmed by electron microprobe and secondary ion mass spectrometry measurements. The optical properties are in accordance with a semiconductor of variable band gap, 1< Eg <1.5 eV, for 0.25 > 1-x > 0. CMT layers of n- and p-type were obtained by appropriate choices of deposition potential and annealing conditions, as shown by the photovoltaic effect of CMT/Au junctions.

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Physical properties of electrochemically deposited cadmium mercury telluride films

Abstract

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