Physical properties of electrochemically deposited cadmium mercury telluride films

M. Neumann-Spallart, G. Tamizhmani, A. Boutry-Forveille, C. Levy-Clement

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

Films of cadmium-rich cadmium mercury telluride (CdxHg1-xTe, CMT) 0.1-2 μm thick were formed on conducting glass (SnO2) by electrochemical (potentiostatic) deposition from an aqueous bath. 1-x ranged from 0 to 0.25. Dependingon the mercury content, a preferential orientation of the films was detected by X-ray diffraction studies. The homogeneous composition of the layers was confirmed by electron microprobe and secondary ion mass spectrometry measurements. The optical properties are in accordance with a semiconductor of variable band gap, 1< Eg <1.5 eV, for 0.25 > 1-x > 0. CMT layers of n- and p-type were obtained by appropriate choices of deposition potential and annealing conditions, as shown by the photovoltaic effect of CMT/Au junctions.

Original languageEnglish (US)
Pages (from-to)315-322
Number of pages8
JournalThin Solid Films
Volume169
Issue number2
DOIs
StatePublished - Feb 15 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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