Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si

R. Roucka, S. Q. Yu, J. Tolle, Y. Y. Fang, S. N. Wu, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
Original languageEnglish (US)
Title of host publicationLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
Pages178-179
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Lake Buena Vista, FL, United States
Duration: Oct 21 2007Oct 25 2007

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
CountryUnited States
CityLake Buena Vista, FL
Period10/21/0710/25/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Roucka, R., Yu, S. Q., Tolle, J., Fang, Y. Y., Wu, S. N., Menendez, J., & Kouvetakis, J. (2007). Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si. In LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings (pp. 178-179). [4382335] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2007.4382335