Abstract

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schrödinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Original languageEnglish (US)
Article number061915
JournalApplied Physics Letters
Volume101
Issue number6
DOIs
StatePublished - Aug 6 2012

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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