Abstract

CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schrödinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

Original languageEnglish (US)
Article number061915
JournalApplied Physics Letters
Volume101
Issue number6
DOIs
StatePublished - Aug 6 2012

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superlattices
photoluminescence
carrier lifetime
Poisson equation
blue shift
molecular beam epitaxy
alignment
spectroscopy
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence studies of type-II CdSe/CdTe superlattices. / Li, Jing Jing; Yin, Leijun; Johnson, Shane; Skromme, Brian; Wang, Shumin; Liu, Xinyu; Ding, Ding; Ning, Cun-Zheng; Furdyna, Jacek K.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 101, No. 6, 061915, 06.08.2012.

Research output: Contribution to journalArticle

Li, Jing Jing ; Yin, Leijun ; Johnson, Shane ; Skromme, Brian ; Wang, Shumin ; Liu, Xinyu ; Ding, Ding ; Ning, Cun-Zheng ; Furdyna, Jacek K. ; Zhang, Yong-Hang. / Photoluminescence studies of type-II CdSe/CdTe superlattices. In: Applied Physics Letters. 2012 ; Vol. 101, No. 6.
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abstract = "CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schr{\"o}dinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.",
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