Photoluminescence refrigeration in semiconductors

J. B. Wang, Shane Johnson, D. Ding, S. Q. Yu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A theoretical study of photoluminescence refrigeration in semiconductors has been carried out using a model that takes into account photon recycling and includes the rate equations for both carriers and photons. General expressions for cooling efficiency, cooling power density, and the cooling condition are derived. The investigation of the photoluminescence refrigeration in an intrinsic GaAs slab shows that net cooling is accessible when quantum efficiency and luminescence extraction are high, and that photon recycling contributes strongly to photoluminescence refrigeration when the luminescence extraction efficiency is small.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
DOIs
StatePublished - May 22 2006
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: Jan 22 2006Jan 26 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6115
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
CountryUnited States
CitySan Jose, CA
Period1/22/061/26/06

Keywords

  • Photoluminescence
  • Photon recycling
  • Refrigeration
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Photoluminescence refrigeration in semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Wang, J. B., Johnson, S., Ding, D., Yu, S. Q., & Zhang, Y-H. (2006). Photoluminescence refrigeration in semiconductors. In Physics and Simulation of Optoelectronic Devices XIV [61152C] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6115). https://doi.org/10.1117/12.645359