PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

Toshio Sakurai; R. J. Culbertson; A. J. Melmed

doi:10.1116/1.570016

PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

Toshio Sakurai, R. J. Culbertson, A. J. Melmed

Research output: Contribution to journal › Article › peer-review

Abstract

The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.

Original language	English (US)
Pages (from-to)	626-628
Number of pages	3
Journal	J VAC SCI TECHNOL
Volume	16
Issue number	2
DOIs	https://doi.org/10.1116/1.570016
State	Published - Jan 1 1979
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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title = "PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.",

abstract = "The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.",

author = "Toshio Sakurai and Culbertson, {R. J.} and Melmed, {A. J.}",

year = "1979",

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AB - The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.

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PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

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