PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY.

Toshio Sakurai, Robert Culbertson, A. J. Melmed

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The photoillumination effect which occurs during the field ion microscopy of silicon is investigated in detail using an UHV magnetic-sector atom-probe field ion microscope equipped with a retarding potential energy analyzer. It is shown that the observed enhancement of image intensity and field evaporation rate which occurs upon illumination with red light is due to the presence of an oxide layer. Measurements of energy deficits indicate that (1) the oxide layer causes a large potential drop at the emitter cap and (2) red light illumination drastically reduces or completely eliminates the reduction in potential.

Original languageEnglish (US)
Pages (from-to)626-628
Number of pages3
JournalJ Vac Sci Technol
Volume16
Issue number2
DOIs
StatePublished - Mar 1979
Externally publishedYes

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Microscopic examination
Lighting
Ion microscopes
Silicon
Oxides
Ions
Potential energy
Evaporation
Atoms

ASJC Scopus subject areas

  • Engineering(all)

Cite this

PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY. / Sakurai, Toshio; Culbertson, Robert; Melmed, A. J.

In: J Vac Sci Technol, Vol. 16, No. 2, 03.1979, p. 626-628.

Research output: Contribution to journalArticle

Sakurai, Toshio ; Culbertson, Robert ; Melmed, A. J. / PHOTOILLUMINATION EFFECT ON SILICON FIELD ION MICROSCOPY. In: J Vac Sci Technol. 1979 ; Vol. 16, No. 2. pp. 626-628.
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