Photo induced electron emission from nitrogen doped diamond films on silicon

Tianyin Sun; Franz A M Koeck; Aram Rezikyan; Michael Treacy; Robert Nemanich

doi:10.1109/IVNC.2013.6624728

Photo induced electron emission from nitrogen doped diamond films on silicon

Tianyin Sun, Franz A M Koeck, Aram Rezikyan, Michael Treacy, Robert Nemanich

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Results are presented on the photo-induced electron emission from nitrogen doped diamond films prepared on doped silicon substrates. In contrast to results for films on metal substrates, a significant increase of emission intensity was observed at elevated temperatures. The results suggest a contribution from photon enhanced thermionic emission.

Original language	English (US)
Title of host publication	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
DOIs	https://doi.org/10.1109/IVNC.2013.6624728
State	Published - Dec 9 2013
Event	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 - Roanoke, VA, United States Duration: Jul 8 2013 → Jul 12 2013

Publication series

Name	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Other

Other	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
Country/Territory	United States
City	Roanoke, VA
Period	7/8/13 → 7/12/13

Keywords

nitrogen-doped diamond
photo-induced electron emission
thermionic electron emission

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2013.6624728

Cite this

Photo induced electron emission from nitrogen doped diamond films on silicon. / Sun, Tianyin; Koeck, Franz A M; Rezikyan, Aram et al.
2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013. 2013. 6624728 (2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sun, T, Koeck, FAM, Rezikyan, A, Treacy, M & Nemanich, R 2013, Photo induced electron emission from nitrogen doped diamond films on silicon. in 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013., 6624728, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, Roanoke, VA, United States, 7/8/13. https://doi.org/10.1109/IVNC.2013.6624728

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title = "Photo induced electron emission from nitrogen doped diamond films on silicon",

abstract = "Results are presented on the photo-induced electron emission from nitrogen doped diamond films prepared on doped silicon substrates. In contrast to results for films on metal substrates, a significant increase of emission intensity was observed at elevated temperatures. The results suggest a contribution from photon enhanced thermionic emission.",

keywords = "nitrogen-doped diamond, photo-induced electron emission, thermionic electron emission",

author = "Tianyin Sun and Koeck, {Franz A M} and Aram Rezikyan and Michael Treacy and Robert Nemanich",

year = "2013",

month = dec,

day = "9",

doi = "10.1109/IVNC.2013.6624728",

language = "English (US)",

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series = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

booktitle = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

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T1 - Photo induced electron emission from nitrogen doped diamond films on silicon

AU - Sun, Tianyin

AU - Koeck, Franz A M

AU - Rezikyan, Aram

AU - Treacy, Michael

AU - Nemanich, Robert

PY - 2013/12/9

Y1 - 2013/12/9

N2 - Results are presented on the photo-induced electron emission from nitrogen doped diamond films prepared on doped silicon substrates. In contrast to results for films on metal substrates, a significant increase of emission intensity was observed at elevated temperatures. The results suggest a contribution from photon enhanced thermionic emission.

AB - Results are presented on the photo-induced electron emission from nitrogen doped diamond films prepared on doped silicon substrates. In contrast to results for films on metal substrates, a significant increase of emission intensity was observed at elevated temperatures. The results suggest a contribution from photon enhanced thermionic emission.

KW - nitrogen-doped diamond

KW - photo-induced electron emission

KW - thermionic electron emission

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U2 - 10.1109/IVNC.2013.6624728

DO - 10.1109/IVNC.2013.6624728

M3 - Conference contribution

AN - SCOPUS:84889013020

SN - 9781467359931

T3 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

BT - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

T2 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Y2 - 8 July 2013 through 12 July 2013

ER -

Photo induced electron emission from nitrogen doped diamond films on silicon

Abstract

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Keywords

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