Photo induced electron emission from nitrogen doped diamond films on silicon

Tianyin Sun, Franz A M Koeck, Aram Rezikyan, Michael Treacy, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Results are presented on the photo-induced electron emission from nitrogen doped diamond films prepared on doped silicon substrates. In contrast to results for films on metal substrates, a significant increase of emission intensity was observed at elevated temperatures. The results suggest a contribution from photon enhanced thermionic emission.

Original languageEnglish (US)
Title of host publication2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
DOIs
StatePublished - Dec 9 2013
Event2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 - Roanoke, VA, United States
Duration: Jul 8 2013Jul 12 2013

Publication series

Name2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Other

Other2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
CountryUnited States
CityRoanoke, VA
Period7/8/137/12/13

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Keywords

  • nitrogen-doped diamond
  • photo-induced electron emission
  • thermionic electron emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sun, T., Koeck, F. A. M., Rezikyan, A., Treacy, M., & Nemanich, R. (2013). Photo induced electron emission from nitrogen doped diamond films on silicon. In 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 [6624728] (2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013). https://doi.org/10.1109/IVNC.2013.6624728