Phonons in III-V nitrides: Confined phonons and interface phonons

M. Dutta, D. Alexson, L. Bergman, R. J. Nemanich, R. Dupuis, K. W. Kim, S. Komirenko, M. Stroscio

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented.

Original languageEnglish (US)
Pages (from-to)277-280
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume11
Issue number2-3
DOIs
StatePublished - Oct 2001
Externally publishedYes

Keywords

  • Confined optical phonons
  • Nitrides
  • Raman scattering
  • Wurtzites

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Dutta, M., Alexson, D., Bergman, L., Nemanich, R. J., Dupuis, R., Kim, K. W., Komirenko, S., & Stroscio, M. (2001). Phonons in III-V nitrides: Confined phonons and interface phonons. Physica E: Low-Dimensional Systems and Nanostructures, 11(2-3), 277-280. https://doi.org/10.1016/S1386-9477(01)00217-X