Phonons in III-V nitrides: Confined phonons and interface phonons

M. Dutta; D. Alexson; L. Bergman; R. J. Nemanich; R. Dupuis; K. W. Kim; S. Komirenko; M. Stroscio

doi:10.1016/S1386-9477(01)00217-X

Phonons in III-V nitrides: Confined phonons and interface phonons

M. Dutta, D. Alexson, L. Bergman, R. J. Nemanich, R. Dupuis, K. W. Kim, S. Komirenko, M. Stroscio

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented.

Original language	English (US)
Pages (from-to)	277-280
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	11
Issue number	2-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00217-X
State	Published - Oct 2001
Externally published	Yes

Keywords

Confined optical phonons
Nitrides
Raman scattering
Wurtzites

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(01)00217-X

Cite this

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title = "Phonons in III-V nitrides: Confined phonons and interface phonons",

abstract = "Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented.",

keywords = "Confined optical phonons, Nitrides, Raman scattering, Wurtzites",

author = "M. Dutta and D. Alexson and L. Bergman and Nemanich, {R. J.} and R. Dupuis and Kim, {K. W.} and S. Komirenko and M. Stroscio",

note = "Funding Information: We thank the support of the Army Research Office and the National Science Foundation for the support of this research.",

year = "2001",

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doi = "10.1016/S1386-9477(01)00217-X",

language = "English (US)",

volume = "11",

pages = "277--280",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Phonons in III-V nitrides

T2 - Confined phonons and interface phonons

AU - Dutta, M.

AU - Alexson, D.

AU - Bergman, L.

AU - Nemanich, R. J.

AU - Dupuis, R.

AU - Kim, K. W.

AU - Komirenko, S.

AU - Stroscio, M.

N1 - Funding Information: We thank the support of the Army Research Office and the National Science Foundation for the support of this research.

PY - 2001/10

Y1 - 2001/10

N2 - Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented.

AB - Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented.

KW - Confined optical phonons

KW - Nitrides

KW - Raman scattering

KW - Wurtzites

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M3 - Article

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-3

ER -

Phonons in III-V nitrides: Confined phonons and interface phonons

Abstract

Keywords

ASJC Scopus subject areas

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