Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.

Original languageEnglish (US)
Article number094303
JournalJournal of Applied Physics
Volume98
Issue number9
DOIs
StatePublished - Nov 1 2005

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ballistics
crossovers
nanowires
transistors
weak energy interactions
silicon
simulation
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors. / Gilbert, M. J.; Akis, R.; Ferry, D. K.

In: Journal of Applied Physics, Vol. 98, No. 9, 094303, 01.11.2005.

Research output: Contribution to journalArticle

Gilbert, M. J. ; Akis, R. ; Ferry, D. K. / Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 9.
@article{905c49868f5f4563856d605f31d53dec,
title = "Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors",
abstract = "As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.",
author = "Gilbert, {M. J.} and R. Akis and Ferry, {D. K.}",
year = "2005",
month = "11",
day = "1",
doi = "10.1063/1.2120890",
language = "English (US)",
volume = "98",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors

AU - Gilbert, M. J.

AU - Akis, R.

AU - Ferry, D. K.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.

AB - As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.

UR - http://www.scopus.com/inward/record.url?scp=27844528513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27844528513&partnerID=8YFLogxK

U2 - 10.1063/1.2120890

DO - 10.1063/1.2120890

M3 - Article

AN - SCOPUS:27844528513

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 094303

ER -