Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.

Original languageEnglish (US)
Article number094303
JournalJournal of Applied Physics
Volume98
Issue number9
DOIs
StatePublished - Nov 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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