As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a real-space self-energy assuming weak interactions. In these silicon nanowire transistors, the ballistic to diffusive crossover occurs at much smaller distances than previously anticipated.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - Nov 1 2005|
ASJC Scopus subject areas
- Physics and Astronomy(all)