Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Jianping Liu; Yun Zhang; Zachary Lochner; Seong Soo Kim; Hyunsoo Kim; Jae Hyun Ryou; Shyh Chiang Shen; P. Doug Yoder; Russell D. Dupuis; Qiyuan Y. Wei; Kewei W. Sun; Alec M. Fischer; Fernando Ponce

doi:10.1016/j.jcrysgro.2010.09.071

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Jianping Liu, Yun Zhang, Zachary Lochner, Seong Soo Kim, Hyunsoo Kim, Jae Hyun Ryou, Shyh Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan Y. Wei, Kewei W. Sun, Alec M. Fischer, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at the interface between the top GaN quantum barrier and the AlGaN electron blocking layer (EBL) induced by polarization fields, a tapered AlGaN EBL was used. Compared to LDs with conventional AlGaN EBLs, the threshold current density of LDs with a tapered AlGaN EBL is significantly reduced and the slope efficiency is increased. In_0.03Ga_0.97N was used as waveguide layers in blue LD structures to increase the optical confinement. It is observed that In_0.03Ga_0.97N waveguiding layers significantly improve the emission efficiency of the active region in addition to offering better optical confinement. The responsible underlying mechanism has been investigated.

Original language	English (US)
Pages (from-to)	272-277
Number of pages	6
Journal	Journal of Crystal Growth
Volume	315
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.09.071
State	Published - Jan 15 2011

Keywords

A3. Metalorganic chemical vapor deposition
B2. Semiconducting IIIV materials
B3. Laser diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.09.071

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Liu, J., Zhang, Y., Lochner, Z., Kim, S. S., Kim, H., Ryou, J. H., Shen, S. C., Doug Yoder, P., Dupuis, R. D., Wei, Q. Y., Sun, K. W., Fischer, A. M., & Ponce, F. (2011). Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition. Journal of Crystal Growth, 315(1), 272-277. https://doi.org/10.1016/j.jcrysgro.2010.09.071

Liu, J, Zhang, Y, Lochner, Z, Kim, SS, Kim, H, Ryou, JH, Shen, SC, Doug Yoder, P, Dupuis, RD, Wei, QY, Sun, KW, Fischer, AM & Ponce, F 2011, 'Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition', Journal of Crystal Growth, vol. 315, no. 1, pp. 272-277. https://doi.org/10.1016/j.jcrysgro.2010.09.071

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title = "Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition",

abstract = "We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at the interface between the top GaN quantum barrier and the AlGaN electron blocking layer (EBL) induced by polarization fields, a tapered AlGaN EBL was used. Compared to LDs with conventional AlGaN EBLs, the threshold current density of LDs with a tapered AlGaN EBL is significantly reduced and the slope efficiency is increased. In0.03Ga0.97N was used as waveguide layers in blue LD structures to increase the optical confinement. It is observed that In0.03Ga0.97N waveguiding layers significantly improve the emission efficiency of the active region in addition to offering better optical confinement. The responsible underlying mechanism has been investigated.",

keywords = "A3. Metalorganic chemical vapor deposition, B2. Semiconducting IIIV materials, B3. Laser diodes",

author = "Jianping Liu and Yun Zhang and Zachary Lochner and Kim, {Seong Soo} and Hyunsoo Kim and Ryou, {Jae Hyun} and Shen, {Shyh Chiang} and {Doug Yoder}, P. and Dupuis, {Russell D.} and Wei, {Qiyuan Y.} and Sun, {Kewei W.} and Fischer, {Alec M.} and Fernando Ponce",

note = "Funding Information: The research was supported by the DARPA VIGIL program (Contract # FA8718-08-C-0006 ). R.D. Dupuis acknowledges the support of Steve W. Chaddick Endowed Chair in Electro-Optics, and the Georgia Research Alliance. ",

year = "2011",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2010.09.071",

language = "English (US)",

volume = "315",

pages = "272--277",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

AU - Liu, Jianping

AU - Zhang, Yun

AU - Lochner, Zachary

AU - Kim, Seong Soo

AU - Kim, Hyunsoo

AU - Ryou, Jae Hyun

AU - Shen, Shyh Chiang

AU - Doug Yoder, P.

AU - Dupuis, Russell D.

AU - Wei, Qiyuan Y.

AU - Sun, Kewei W.

AU - Fischer, Alec M.

AU - Ponce, Fernando

N1 - Funding Information: The research was supported by the DARPA VIGIL program (Contract # FA8718-08-C-0006 ). R.D. Dupuis acknowledges the support of Steve W. Chaddick Endowed Chair in Electro-Optics, and the Georgia Research Alliance.

PY - 2011/1/15

Y1 - 2011/1/15

N2 - We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at the interface between the top GaN quantum barrier and the AlGaN electron blocking layer (EBL) induced by polarization fields, a tapered AlGaN EBL was used. Compared to LDs with conventional AlGaN EBLs, the threshold current density of LDs with a tapered AlGaN EBL is significantly reduced and the slope efficiency is increased. In0.03Ga0.97N was used as waveguide layers in blue LD structures to increase the optical confinement. It is observed that In0.03Ga0.97N waveguiding layers significantly improve the emission efficiency of the active region in addition to offering better optical confinement. The responsible underlying mechanism has been investigated.

AB - We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at the interface between the top GaN quantum barrier and the AlGaN electron blocking layer (EBL) induced by polarization fields, a tapered AlGaN EBL was used. Compared to LDs with conventional AlGaN EBLs, the threshold current density of LDs with a tapered AlGaN EBL is significantly reduced and the slope efficiency is increased. In0.03Ga0.97N was used as waveguide layers in blue LD structures to increase the optical confinement. It is observed that In0.03Ga0.97N waveguiding layers significantly improve the emission efficiency of the active region in addition to offering better optical confinement. The responsible underlying mechanism has been investigated.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting IIIV materials

KW - B3. Laser diodes

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U2 - 10.1016/j.jcrysgro.2010.09.071

DO - 10.1016/j.jcrysgro.2010.09.071

M3 - Article

AN - SCOPUS:79551686206

SN - 0022-0248

VL - 315

SP - 272

EP - 277

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Abstract

Keywords

ASJC Scopus subject areas

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